An ultra-low-power area-efficient non-volatile memory in a 0.18μm single-poly CMOS process for passive RFID tags

• Published in: Journal of semiconductors Vol. 34; no. 8; pp. 94 - 98
• Main Author: 贾晓云 冯鹏 张胜广 吴南健 赵柏秦 刘肃
• Format: Journal Article
• Language: English
• Published: 01.08.2013
• Subjects: Arrays; CMOS; CMOS工艺; Memory (computers); Radio frequency identification; RFID标签; Semiconductors; Tags; Voltage; 多晶硅; 无源; 记忆体; 超低功耗; 非挥发性; 面积

This paper presents an ultra-low-power area-efficient non-volatile memory（NVM） in a 0.18μm singlepoly standard CMOS process for passive radio frequency identification（RFID） tags.In the memory cell,a novel low-power operation method is proposed to realize bi-directional Fowler-Nordheim tunneling duri...