Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions

The preliminary characterization study and analysis of the short-circuit (SC) capability of SiC MOSFET have been reported in recent years. However, the failure modes of the SiC MOSFET under various SC conditions and their physical mechanisms are unclear. The purpose of this paper is to extensively i...

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Published inMicroelectronics and reliability Vol. 88-90; pp. 593 - 597
Main Authors Jiang, Xi, Wang, Jun, Lu, Jiwu, Chen, Jianjun, Yang, Xin, Li, Zongjian, Tu, Chunming, Shen, Z. John
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.09.2018
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