Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions
The preliminary characterization study and analysis of the short-circuit (SC) capability of SiC MOSFET have been reported in recent years. However, the failure modes of the SiC MOSFET under various SC conditions and their physical mechanisms are unclear. The purpose of this paper is to extensively i...
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Published in | Microelectronics and reliability Vol. 88-90; pp. 593 - 597 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.09.2018
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Subjects | |
Online Access | Get full text |
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