Analysis of Anomalously Large RTS Noise Amplitudes in Tunneling Field-effect Transistors

• Published in: Journal of semiconductor technology and science Vol. 18; no. 2; pp. 193 - 199
• Main Authors: Kim, So-Yeong, Oh, Dong-Jun, Kwon, Sung-Kyu, Song, Hyeong-Sub, Lim, Dong-Hwan, Choi, Chang-Hwan, Lee, Ga-Won, Lee, Hi-Deok
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.04.2018
• Subjects: 전기공학; band-to-band tunneling (BTBT); RTS noiseamplitude; effective channel width; tunneling path; Tunneling field-effect transistor (TFET)
• ISSN: 1598-1657; 2233-4866
• DOI: 10.5573/JSTS.2018.18.2.193

In this paper, the anomalously large random telegraph signal (RTS) noise amplitudes in tunneling field-effect transistors (TFETs) are investigated. Although recent studies have been conducted on the RTS noise in TFETs, few of them have analyzed the factors leading to their large amplitudes. Many studies have reported that the TFET drain current fluctuations caused by RTS noise fall within a range of approximately 5–30%, which is considerably higher than that for metal-oxide-semiconductor field-effect transistors. Through three-dimensional simulations, two factors were identified to contribute to the degradation of TFETs tunneling probabilities and thus lead to large RTS noise amplitudes. One of these factors is the existence of a local and dominant tunneling path in the tunneling region and the other is the relatively short distance between the tunneling path and the single trap. KCI Citation Count: 1