Investigation of Modified 1T DRAM with Twin Gate Tunneling Field Effect Transistor for Improved Retention Characteristics

This paper proposes a one transistor dynamic random access memory (1T DRAM) with localized partial insulator (LPI) to increase data retention time. Proposed 1T DRAM cell is based on twin gate tunneling field effect transistor (TGTFET) and has improved retention characteristics with LPI. The LPI inhi...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 20; no. 2; pp. 145 - 150
Main Authors Han, DongChang, Jang, DeokJin, Lee, JaeYoon, Cho, Seongjae, Cho, IlHwan
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.04.2020
Subjects
전기공학
1T DRAM
localized partial insulator (LPI)
tunnel FET (TFET)
reliability
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Summary:This paper proposes a one transistor dynamic random access memory (1T DRAM) with localized partial insulator (LPI) to increase data retention time. Proposed 1T DRAM cell is based on twin gate tunneling field effect transistor (TGTFET) and has improved retention characteristics with LPI. The LPI inhibit stored carrier movement with high energy barrier. Key process sequence is suggested and device optimizations with parameter variation are also investigated with device simulation. As the barrier length increases, retention characteristics can be improved but also it causes a decrease in the read 1 current. An increase in LPI length within the appropriate range is required in the proposed 1T DRAM. KCI Citation Count: 4
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2020.20.2.145