Dielectric response of tantalum oxide subject to induced ion bombardment during oblique sputter deposition

• Published in: Journal of applied physics Vol. 106; no. 10; pp. 104110 - 104110-9
• Main Authors: Barron, S. C., Noginov, M. M., Werder, D., Schneemeyer, L. F., van Dover, R. B.
• Format: Journal Article
• Language: English
• Published: United States American Institute of Physics 15.11.2009
• Subjects: ARGON IONS; BEAMS; CHALCOGENIDES; CHARGED PARTICLES; DEPOSITION; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; FREQUENCY DEPENDENCE; ION BEAMS; IONS; MATERIALS; MATERIALS SCIENCE; OXIDES; OXYGEN COMPOUNDS; OXYGEN IONS; PERMITTIVITY; PHYSICAL PROPERTIES; POLARIZATION; REFRACTORY METAL COMPOUNDS; SPUTTERING; SUBSTRATES; TANTALUM COMPOUNDS; TANTALUM OXIDES; THIN FILMS; TRANSITION ELEMENT COMPOUNDS

We describe the deposition of insulating tantalum oxide thin films under conditions of controlled ion bombardment, which can be achieved using reactive sputtering on 90° off-axis substrates with an applied substrate bias. Capacitive measurements of Ta 2 O 5 deposited on unbiased off-axis substrates...