Study of dual-valley transport across a multiquantum barrier to enhance carrier confinement

• Published in: Applied surface science Vol. 234; no. 1-4; pp. 434 - 438
• Main Authors: BROWN, M. R, TENG, K. S, KESTLE, A, SMOWTON, P, BLOOD, P, MAWBY, P. A, WILKS, S. P
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier Science 15.07.2004
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Physics; Conduction bands; Band structure; Quantum wells; Tunnel effect; AlGaInP laser diodes; Inter-valley transport; Leakage currents; Cladding; Laser diodes; Multiquantum barrier; Tunnelling; p type semiconductor; Superlattices; Band offset; Barrier height; Superlattice
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.05.074

Red-emitting quantum well (QW) 630 nm laser diodes have many potential applications in industry and medicine. However, manufacture of such short wavelength lasers is impeded by severe electron leakage from the active region, which is predominantly attributed to loss of thermally activated electrons, via the inherently low conduction band offsets and possible inter-valley transfer to the lower energy X-band minima. To combat the high leakage current in such devices, we have implemented a multiquantum barrier (MQB) into the p-type cladding region of the device, and theoretically optimised the structure to reduce X-band transfer and predict effective enhancement to the intrinsic barrier height.