Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor

A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the galli...

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Published inCoatings (Basel) Vol. 7; no. 8; p. 112
Main Authors Hu, Chih-Kai, Chen, Chun-Jung, Wei, Ta-Chin, Li, Tomi T., Huang, Chih-Yung, Chao, Chu-Li, Lin, Yi-Jiun
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.08.2017
Subjects
Chemical reactions
Chemical vapor deposition
Computer simulation
Epitaxial growth
Film growth
Gallium nitrides
Metalorganic chemical vapor deposition
Reaction mechanisms
Thin films
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Abstract A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the gallium nitride (GaN) mechanism reported in our previous study. The full governing equations for continuity, momentum, energy, and chemical reaction are solved numerically. The results show that the real operating parameters (susceptor temperature: 1188 °C or 1238 °C; pressure: 100-300 torr) affect thin-film uniformity, and the predicted growth rates agree reasonably well with the experimental data, indicating the accuracy of the projected chemical reaction mechanisms.
AbstractList A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the gallium nitride (GaN) mechanism reported in our previous study. The full governing equations for continuity, momentum, energy, and chemical reaction are solved numerically. The results show that the real operating parameters (susceptor temperature: 1188 °C or 1238 °C; pressure: 100-300 torr) affect thin-film uniformity, and the predicted growth rates agree reasonably well with the experimental data, indicating the accuracy of the projected chemical reaction mechanisms.
Author Li, Tomi T.
Huang, Chih-Yung
Wei, Ta-Chin
Lin, Yi-Jiun
Hu, Chih-Kai
Chao, Chu-Li
Chen, Chun-Jung
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crossref_primary_10_1088_0256_307X_35_9_098101
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SubjectTerms Chemical reactions
Chemical vapor deposition
Computer simulation
Epitaxial growth
Film growth
Gallium nitrides
Metalorganic chemical vapor deposition
Reaction mechanisms
Thin films
Title Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor
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Volume 7
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