Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor
A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the galli...
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Published in | Coatings (Basel) Vol. 7; no. 8; p. 112 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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Basel
MDPI AG
01.08.2017
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Abstract | A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the gallium nitride (GaN) mechanism reported in our previous study. The full governing equations for continuity, momentum, energy, and chemical reaction are solved numerically. The results show that the real operating parameters (susceptor temperature: 1188 °C or 1238 °C; pressure: 100-300 torr) affect thin-film uniformity, and the predicted growth rates agree reasonably well with the experimental data, indicating the accuracy of the projected chemical reaction mechanisms. |
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AbstractList | A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presented for verifying the growth rate of the gallium nitride (GaN) mechanism reported in our previous study. The full governing equations for continuity, momentum, energy, and chemical reaction are solved numerically. The results show that the real operating parameters (susceptor temperature: 1188 °C or 1238 °C; pressure: 100-300 torr) affect thin-film uniformity, and the predicted growth rates agree reasonably well with the experimental data, indicating the accuracy of the projected chemical reaction mechanisms. |
Author | Li, Tomi T. Huang, Chih-Yung Wei, Ta-Chin Lin, Yi-Jiun Hu, Chih-Kai Chao, Chu-Li Chen, Chun-Jung |
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Cites_doi | 10.1016/0022-0248(90)90403-8 10.1016/j.jcrysgro.2006.05.063 10.3390/coatings7020022 10.1143/JJAP.37.5823 10.1115/1.3248205 10.1016/j.jcrysgro.2005.10.131 10.1557/S1092578300000600 10.1007/BF02655388 10.1016/j.jcrysgro.2006.11.247 10.4028/www.scientific.net/KEM.656-657.515 10.1149/05201.1021ecst 10.1016/S0022-0248(01)01354-9 10.1016/j.renene.2016.06.065 10.3390/coatings7030043 |
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SubjectTerms | Chemical reactions Chemical vapor deposition Computer simulation Epitaxial growth Film growth Gallium nitrides Metalorganic chemical vapor deposition Reaction mechanisms Thin films |
Title | Numerical Verification of Gallium Nitride Thin-Film Growth in a Large MOCVD Reactor |
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