Very Rapid Growth of High Quality GaAs, InP and Related III-V Compounds

Application of the hydride growth process at overall pressures below 5×10 3 Pa yields very high rates of deposition for binary (GaAs, InP) and ternary (GaInAs, GaAsP) III-V semiconductor films. It is proposed that at these conditions the hydrides AsH 3 and PH 3 reach the substrate surface undecompos...

Full description

Saved in:
Bibliographic Details
Published inESSDERC '88: 18th European Solid State Device Research Conference pp. c4-689 - c4-692
Main Authors Deschler, M., Gruter, K., Schlegel, A., Beccard, R., Jurgensen, H., Balk, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.1988
Subjects
Electron mobility
Gallium arsenide
III-V semiconductor materials
Indium phosphide
Photodetectors
Photoluminescence
Semiconductor device doping
Semiconductor films
Substrates
Surface morphology
Online AccessGet full text

Cover

More Information
Summary:Application of the hydride growth process at overall pressures below 5×10 3 Pa yields very high rates of deposition for binary (GaAs, InP) and ternary (GaInAs, GaAsP) III-V semiconductor films. It is proposed that at these conditions the hydrides AsH 3 and PH 3 reach the substrate surface undecomposed and react directly with the group III chloride (GaCl, InCl). The rates can be convenently adjusted over a wide range by varying the reactant pressures. Films of excellent morphology with low background doping, high electron mobilities and well resolved PL spectra were obtained.
ISBN:9782868830999
2868830994
DOI:10.1051/jphyscol:19884144