Work-Function Engineering of Source-Overlapped Dual-Gate Tunnel Field-Effect Transistor
A source-overlapped dual-material gate TFET (SODM-TFET), which features different materials in its source-overlapped and channel gates, is proposed here, and its performance is investigated for various channel and source gate work functions (ψmc and ψms, respectively). Previous studies reported a hu...
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| Published in | Journal of nanoscience and nanotechnology Vol. 18; no. 9; p. 5925 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
01.09.2018
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| Online Access | Get more information |
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