GaN/AlGaN HBT fabrication
Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy. For both types of material, DC current gains of ∼10 were achieved in 90 μm emitter diameter devices measured at 300°C. Some of th...
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| Published in | Solid-state electronics Vol. 44; no. 2; pp. 239 - 244 |
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| Main Authors | , , , , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.02.2000
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| Online Access | Get full text |
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| Abstract | Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy. For both types of material, DC current gains of ∼10 were achieved in 90 μm emitter diameter devices measured at 300°C. Some of the key processing steps, such as ohmic contact annealing temperature and mesa fabrication by low damage dry etching, are described, together with secondary ion mass spectrometry measurements of the dopant and background impurity profiles. |
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| AbstractList | Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy. For both types of material, DC current gains of ∼10 were achieved in 90 μm emitter diameter devices measured at 300°C. Some of the key processing steps, such as ohmic contact annealing temperature and mesa fabrication by low damage dry etching, are described, together with secondary ion mass spectrometry measurements of the dopant and background impurity profiles. |
| Author | LaRoche, J.R Shul, R.J Abernathy, C.R Han, J Baca, A.G Cho, H Donovan, S.M Kopf, R.F Chow, P.P Klaassen, J.J Willison, C.G Pearton, S.J Cao, X.A Ren, F Zhang, L Jung, K.B Wilson, R.G Van Hove, J.M Hickman, R |
| Author_xml | – sequence: 1 givenname: F surname: Ren fullname: Ren, F email: ren@che.ufl.edu organization: Department of Chemical Engineering, University of Florida, PO Box 116005, Gainesville, FL 32611, USA – sequence: 2 givenname: J surname: Han fullname: Han, J organization: Sandia National Laboratories, Albuquerque, NM 87185, USA – sequence: 3 givenname: R surname: Hickman fullname: Hickman, R organization: Blue Lotus Micro Devices, an SVT Associates Company, Eden Prairie, MN 55344, USA – sequence: 4 givenname: J.M surname: Van Hove fullname: Van Hove, J.M organization: Blue Lotus Micro Devices, an SVT Associates Company, Eden Prairie, MN 55344, USA – sequence: 5 givenname: P.P surname: Chow fullname: Chow, P.P organization: Blue Lotus Micro Devices, an SVT Associates Company, Eden Prairie, MN 55344, USA – sequence: 6 givenname: J.J surname: Klaassen fullname: Klaassen, J.J organization: Blue Lotus Micro Devices, an SVT Associates Company, Eden Prairie, MN 55344, USA – sequence: 7 givenname: J.R surname: LaRoche fullname: LaRoche, J.R organization: Department of Chemical Engineering, University of Florida, PO Box 116005, Gainesville, FL 32611, USA – sequence: 8 givenname: K.B surname: Jung fullname: Jung, K.B organization: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA – sequence: 9 givenname: H surname: Cho fullname: Cho, H organization: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA – sequence: 10 givenname: X.A surname: Cao fullname: Cao, X.A organization: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA – sequence: 11 givenname: S.M surname: Donovan fullname: Donovan, S.M organization: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA – sequence: 12 givenname: R.F surname: Kopf fullname: Kopf, R.F organization: Bell Laboratories, Murray Hill, NJ 07974, USA – sequence: 13 givenname: R.G surname: Wilson fullname: Wilson, R.G organization: Consultant, Stevenson Ranch, CA 91381, USA – sequence: 14 givenname: A.G surname: Baca fullname: Baca, A.G organization: Sandia National Laboratories, Albuquerque, NM 87185, USA – sequence: 15 givenname: R.J surname: Shul fullname: Shul, R.J organization: Sandia National Laboratories, Albuquerque, NM 87185, USA – sequence: 16 givenname: L surname: Zhang fullname: Zhang, L organization: Sandia National Laboratories, Albuquerque, NM 87185, USA – sequence: 17 givenname: C.G surname: Willison fullname: Willison, C.G organization: Sandia National Laboratories, Albuquerque, NM 87185, USA – sequence: 18 givenname: C.R surname: Abernathy fullname: Abernathy, C.R organization: Sandia National Laboratories, Albuquerque, NM 87185, USA – sequence: 19 givenname: S.J surname: Pearton fullname: Pearton, S.J organization: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA |
| BookMark | eNqFT01LAzEQDVLBbfUHeBB61MPamc1-JCepRVuh6MF6DtlkApG6K8ki-O_NtuLVy5sZeO_Ne1M26fqOGLtCuEXAevEKwEWOab-W8gagKGRenrAMRSPzooRqwrI_yhmbxvgOiVUjZOxyrZ8Xy33C-eZ-N3e6Dd7owffdOTt1eh_p4nfO2Nvjw261ybcv66fVcpsbDnJIKIkLbJrWaKOhddZKR5YKC9DYGjB9AiTRGl5YTiWHktt0i4pcJbDkM1YdfU3oYwzk1GfwHzp8KwQ19lOHfmoMr6RUh35q1N0ddZTCfXkKKhpPnSHrA5lB2d7_4_ADu4JWlA |
| CitedBy_id | crossref_primary_10_1063_1_3267875 crossref_primary_10_1557_PROC_639_G11_32 crossref_primary_10_1049_el_20060333 crossref_primary_10_4028_www_scientific_net_MSF_663_665_1314 crossref_primary_10_1016_S0022_0248_00_00808_3 crossref_primary_10_1016_S0038_1101_02_00498_7 crossref_primary_10_1016_S0038_1101_01_00015_6 crossref_primary_10_1016_S0038_1101_03_00088_1 crossref_primary_10_1016_S0038_1101_02_00496_3 crossref_primary_10_1016_S0038_1101_03_00002_9 crossref_primary_10_1116_1_1330260 crossref_primary_10_1016_j_mejo_2005_10_001 crossref_primary_10_1088_0268_1242_19_2_009 crossref_primary_10_1016_S0038_1101_02_00462_8 crossref_primary_10_1063_1_2149156 crossref_primary_10_1109_TIE_2019_2931233 crossref_primary_10_1063_1_2164527 crossref_primary_10_1016_j_sse_2007_05_013 crossref_primary_10_1016_j_jcrysgro_2006_10_231 crossref_primary_10_1016_S0038_1101_03_00106_0 crossref_primary_10_1049_el_20093076 crossref_primary_10_1016_S0927_796X_00_00028_0 crossref_primary_10_35848_1882_0786_ac6197 |
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| ContentType | Journal Article |
| Copyright | 2000 Elsevier Science Ltd |
| Copyright_xml | – notice: 2000 Elsevier Science Ltd |
| DBID | AAYXX CITATION |
| DOI | 10.1016/S0038-1101(99)00229-4 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1879-2405 |
| EndPage | 244 |
| ExternalDocumentID | 10_1016_S0038_1101_99_00229_4 S0038110199002294 |
| GroupedDBID | --K --M -~X .DC .~1 0R~ 123 1B1 1RT 1~. 1~5 4.4 457 4G. 5VS 6TJ 7-5 71M 8P~ 9JN AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AAXUO ABFNM ABFRF ABJNI ABMAC ABNEU ABTAH ABXDB ABXRA ABYKQ ACDAQ ACFVG ACGFO ACGFS ACNCT ACNNM ACRLP ADBBV ADEZE ADMUD ADTZH AEBSH AECPX AEFWE AEKER AENEX AEZYN AFFNX AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AHJVU AIEXJ AIKHN AITUG AIVDX AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ ASPBG AVWKF AXJTR AZFZN BBWZM BJAXD BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F5P FDB FEDTE FGOYB FIRID FNPLU FYGXN G-2 G-Q G8K GBLVA HMV HVGLF HZ~ H~9 IHE J1W JJJVA KOM LY7 M24 M38 M41 MAGPM MO0 N9A NDZJH O-L O9- OAUVE OGIMB OZT P-8 P-9 P2P PC. PZZ Q38 R2- RIG RNS ROL RPZ SDF SDG SDP SES SET SEW SMS SPC SPCBC SPD SPG SSM SSQ SST SSZ T5K TAE TN5 WH7 WUQ XFK XSW ZMT ZY4 ~G- AAXKI AAYXX AFJKZ AKRWK CITATION |
| ID | FETCH-LOGICAL-c309t-c39e38177bcaca0bfdd9fede2d007d60100201e8bc32d3e43043d1e885ef58143 |
| IEDL.DBID | .~1 |
| ISSN | 0038-1101 |
| IngestDate | Thu Sep 26 17:54:04 EDT 2024 Fri Feb 23 02:23:59 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 2 |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c309t-c39e38177bcaca0bfdd9fede2d007d60100201e8bc32d3e43043d1e885ef58143 |
| PageCount | 6 |
| ParticipantIDs | crossref_primary_10_1016_S0038_1101_99_00229_4 elsevier_sciencedirect_doi_10_1016_S0038_1101_99_00229_4 |
| PublicationCentury | 2000 |
| PublicationDate | 2000-02-01 |
| PublicationDateYYYYMMDD | 2000-02-01 |
| PublicationDate_xml | – month: 02 year: 2000 text: 2000-02-01 day: 01 |
| PublicationDecade | 2000 |
| PublicationTitle | Solid-state electronics |
| PublicationYear | 2000 |
| Publisher | Elsevier Ltd |
| Publisher_xml | – name: Elsevier Ltd |
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| SSID | ssj0002610 |
| Score | 1.7536228 |
| Snippet | Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular... |
| SourceID | crossref elsevier |
| SourceType | Aggregation Database Publisher |
| StartPage | 239 |
| Title | GaN/AlGaN HBT fabrication |
| URI | https://dx.doi.org/10.1016/S0038-1101(99)00229-4 |
| Volume | 44 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV07a8MwED5CurRD6ZOmj-ChQzs4cSLZlsY0NHVb8JRANqEnBEoaQrL2t_dkyySF0qGLwMIS9if5vu_E3RngnjGndcJz9E2ojJGhk1ihOoolyZmkGWrsOtqizIoZfZun8xaMm1wYH1YZbH9t0ytrHXr6Ac3-arHwOb7INrij0J4iEXFfE5Qi_eGe7n3twjzQQwilGdFbwrt3WTz1DFXnA-eP1SQx_Z2f9jhncgLHQSxGo_p5TqFll2dwtFdC8Bw6L7Lsjz6wjYqnaeSkWodTuAuYTZ6n4yIOvzuINUn4Bltufb28XGmpZaKcMdxZY4cGedx4xwml3cAypcnQEEtJQonBa5ZalzLUPZfQXn4u7RVEhuBnpzNJtTM0d1QNMg87uiuU--ouHeg1LylWdVULsQv3QlSER0VwLipUBO0Aa6AQP5ZHoOX9e-j1_4fewGGd-e6jR26hvVlv7R1qgI3qVovchYPR63tRfgM05abH |
| link.rule.ids | 315,783,787,4509,24128,27936,27937,45597,45691 |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV07T8MwED6VMgAD4inKMwMDDGnT2k3ssVSUAKVTK3Wz_JQqoVJVYeW3c05ctUiIgcVSrNhKPjv3fWfdXQBuGXNaJzxD34TKGBk6iRWqo1iSjEmaosauoi1GaT6hL9PutAb9VS6MD6sMtr-y6aW1Dj2tgGZrMZv5HF9kG9xRaE-RiDjdgm3q9TFu6ubXOs4DXYRQmxHdJbx9ncZTTVF23nF-X84S098JaoN0BgewH9Ri1Kse6BBqdn4Eexs1BI-h8SRHrd47tlH-MI6cVMtwDHcCk8HjuJ_H4X8HsSYJL7Dl1hfMy5SWWibKGcOdNbZjkMiN95xQ27UtU5p0DLGUJJQYvGZd67oMhc8p1Ocfc3sGkSH43elUUu0MzRxV7dTjjv4K5b68SwOaq5cUi6qshVjHeyEqwqMiOBclKoI2gK2gED_WR6Dp_Xvo-f-H3sBOPn4biuHz6PUCdqs0eB9Kcgn1Yvlpr1AQFOq6XPBvgXCoYA |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=GaN%2FAlGaN+HBT+fabrication&rft.jtitle=Solid-state+electronics&rft.au=Ren%2C+F&rft.au=Han%2C+J&rft.au=Hickman%2C+R&rft.au=Van+Hove%2C+J.M&rft.date=2000-02-01&rft.issn=0038-1101&rft.volume=44&rft.issue=2&rft.spage=239&rft.epage=244&rft_id=info:doi/10.1016%2FS0038-1101%2899%2900229-4&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_S0038_1101_99_00229_4 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0038-1101&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0038-1101&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0038-1101&client=summon |