Role of aluminum ions on the dielectric and conducting properties of multiferroic Tb1−xAlxMnO3: Study at high temperatures

• Published in: Solid state sciences Vol. 38; pp. 62 - 68
• Main Authors: Izquierdo, J.L., Forero, A., Bolaños, G., Zapata, V.H., Morán, O.
• Format: Journal Article
• Language: English
• Published: Issy-les-Moulineaux Elsevier Masson SAS 01.12.2014; Elsevier Masson
• Subjects: Complex impedance spectroscopy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Doping; Exact sciences and technology; Ferroelectricity and antiferroelectricity; Multiferroics; Physics; Complex impedance spectroscopy; Doping; Multiferroics; Frequency dependence; Electrical conductivity; Charge carriers; Dielectric materials; Dielectric properties; High temperature; Electrical model; Relaxation time; Complex impedance; Ferroic material; Relaxation; Valence; Solid state reaction; Aluminium additions; Microstructure; Permittivity; Equivalent circuits

Dielectric and conducting properties of Tb1−xAlxMnO3 (x = 0, 0.05) synthesized by the solid–state reaction method have been investigated. The Al ion has the same valence as substituted Tb but is nonmagnetic and its small size gives rise to microstructural strain which affects the multiferroic proper...