Effect of cooling rate on the microstructure of rapidly solidified SiGe

• Published in: Materials characterization Vol. 154; pp. 377 - 385
• Main Authors: Hussain, Naveed, Mullis, Andrew M., Haque, Nafisul
• Format: Journal Article
• Language: English
• Published: Elsevier Inc 01.08.2019
• Subjects: Rapid solidification; Semiconductor compounds; Solidification microstructures; Thermoelectric alloys; Semiconductor compounds; Solidification microstructures; Rapid solidification; Thermoelectric alloys

Si-30 wt% Ge (14.2 at.% Ge) alloy has been subject to rapid solidification by drop-tube processing, with the resulting powders being subject to cooling rates between 1800 and 20,000 K s−1. Microstructure characterisation was conducted via SEM which showed the formation of distinctive Si-rich grains...