Highly improved passivation of PECVD p-type TOPCon by suppressing plasma-oxidation ion-bombardment-induced damages

• Published in: Solar energy Vol. 242; pp. 1 - 9
• Main Authors: Ma, Dian, Liu, Wei, Xiao, Mingjing, Yang, Zhenhai, Liu, Zunke, Liao, Mingdun, Han, Qingling, Cheng, Hao, Xing, Haiyang, Ding, Zetao, Yan, Baojie, Wang, Yude, Zeng, Yuheng, Ye, Jichun
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2022
• Subjects: Ion-bombardment; Passivation; PECVD p-type TOPCon; Plasma-assist oxidation; Plasma-assist oxidation; PECVD p-type TOPCon; Ion-bombardment; Passivation

•Two-step oxidation (TSO) was effective in suppressing the ion-bombardment damage.•PECVD p-TOPCon with TSO SiOx shows excellent passivation with an iVoc of ∼712 mV and a J0,s of ∼10 fA/cm2.•P-TOPCon with TSO SiOx produces a low contact resistivity of ∼10 mΩ·cm2.•An efficiency of 24.6% based on the s...