Resistive switching characteristics of methyl-ammonium lead iodide perovskite during atmosphere degradation

• Published in: Journal of alloys and compounds Vol. 963; p. 171231
• Main Authors: Wafee, Seema, Leu, Ching-Chich, Chen, Yu-Wen, Liu, Bernard Haochih
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 10.11.2023
• Subjects: Conductive atomic force microscope (c-AFM); Degradation; Local current-voltage (I-V) characteristics; Methylammonium lead iodide (MAPbI3) perovskite; Resistive random access memory (RRAM); Thin films; Thin films; Local current-voltage (I-V) characteristics; Degradation; Methylammonium lead iodide (MAPbI3) perovskite; Conductive atomic force microscope (c-AFM); Resistive random access memory (RRAM)

Methylammonium lead iodide (MAPbI3) with extraordinary optoelectronic properties has recently been explored for memristors. Despite significant studies on its susceptibility to air, there has been limited attention towards the impact of ambiance on resistive switching (RS), specifically, the nanosca...