A thyristor random access memory with localized partial insulator structure to improve retention characteristics at high temperatures

• Published in: Semiconductor science and technology Vol. 40; no. 5; pp. 55012 - 55018
• Main Authors: Ryu, Jaeung, Lee, Woojoo, Kwon, Ikhyeon, Cho, Il Hwan
• Format: Journal Article
• Language: English
• Published: IOP Publishing 30.05.2025
• Subjects: 1T DRAM; 2-T TRAM; localized partial insulator (LPI) structure; retention characteristics; TCAD; thyristor; TRAM

Thyristor RAM (TRAM) is a promising alternative to capacitor-less one transistor (1T) dynamic random access memory (DRAM) due to its high-speed operation and the large current ratio between the programmed and unprogrammed memory states. However, its retention time is significantly reduced at high te...