Characterization of MBE grown diamond structure on Ti/sapphire

Diamond crystallites were found on titanium/sapphire surface as a result of evaporation of C60 from effusion cell in molecular beam epitaxy (MBE) reactor. Substrate temperature, effusion cell temperature and base pressure of the MBE chamber were set as 1050 °C, 650 °C and 1 x 10−9 Torr, respectively...

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Published inIOP conference series. Materials Science and Engineering Vol. 60; no. 1; pp. 12012 - 6
Main Authors Asghar, M, Mahmood, K, Ain, Noor ul, Stiputra, W, Tsu, R
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.01.2014
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Summary:Diamond crystallites were found on titanium/sapphire surface as a result of evaporation of C60 from effusion cell in molecular beam epitaxy (MBE) reactor. Substrate temperature, effusion cell temperature and base pressure of the MBE chamber were set as 1050 °C, 650 °C and 1 x 10−9 Torr, respectively. Raman scattering of the as-grown layers revealed the existence of diamond and graphite at 1337 cm−1 and 1592 cm−1 respectively. Moreover, x-ray-diffraction pattern, micrographs exposed from scanning electron microscopy and optical microscopy also confirmed the evidence of MBE diamond crystallites.
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ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/60/1/012012