Influence of Co doping content on its valence state in Zn1―xCoxO (0 ≤ x ≤ 0.15) thin films

Zn1-xCoxO (0 < = x < = 0.15) thin films grown on Si (1 0 0) substrates were prepared by a sol-gel technique. The effects of Co doped on the structural, optical properties and surface chemical valence states of the Zn1-xCoxO (0 < = x < = 0.15) films were investigated by X-ray diffraction...

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Published inApplied surface science Vol. 255; no. 9; pp. 4992 - 4995
Main Authors LING WEI, ZONGHUI LI, ZHANG, W. F
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 15.02.2009
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Physics
82.80.Ej
31.15.Rh
Cobalt
61.72.Vv
Thin films
Valence
Transition elements
73.61.Ga
Zinc oxide
XPS
Valence state
X-ray photoelectron spectra
Cobalt doping
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Abstract Zn1-xCoxO (0 < = x < = 0.15) thin films grown on Si (1 0 0) substrates were prepared by a sol-gel technique. The effects of Co doped on the structural, optical properties and surface chemical valence states of the Zn1-xCoxO (0 < = x < = 0.15) films were investigated by X-ray diffraction (XRD), ultraviolet-visible spectrometer and X-ray photoelectron spectroscopy (XPS). XRD results show that the Zn1-xCoxO films retained a hexagonal crystal structure of ZnO with better c-axis preferred orientation compared to the undoped ZnO films. The optical absorption spectra suggest that the optical band-gap of the Zn1-xCoxO thin films varied from 3.26 to 2.79 eV with increasing Co content from x = 0 to x = 0.15. XPS studies show the possible oxidation states of Co in Zn1-xCoxO (0 < = x < = 0.05), Zn0.90Co0.10O and Zn0.85Co0.15O are CoO, Co3O4 and Co2O3, with an increase of Co content, respectively.
AbstractList Zn1-xCoxO (0 < = x < = 0.15) thin films grown on Si (1 0 0) substrates were prepared by a sol-gel technique. The effects of Co doped on the structural, optical properties and surface chemical valence states of the Zn1-xCoxO (0 < = x < = 0.15) films were investigated by X-ray diffraction (XRD), ultraviolet-visible spectrometer and X-ray photoelectron spectroscopy (XPS). XRD results show that the Zn1-xCoxO films retained a hexagonal crystal structure of ZnO with better c-axis preferred orientation compared to the undoped ZnO films. The optical absorption spectra suggest that the optical band-gap of the Zn1-xCoxO thin films varied from 3.26 to 2.79 eV with increasing Co content from x = 0 to x = 0.15. XPS studies show the possible oxidation states of Co in Zn1-xCoxO (0 < = x < = 0.05), Zn0.90Co0.10O and Zn0.85Co0.15O are CoO, Co3O4 and Co2O3, with an increase of Co content, respectively.
Author ZHANG, W. F
ZONGHUI LI
LING WEI
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  fullname: ZHANG, W. F
  organization: Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University, Kaifeng 475001, China
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Issue 9
Keywords 82.80.Ej
31.15.Rh
Cobalt
61.72.Vv
Thin films
Valence
Transition elements
73.61.Ga
Zinc oxide
XPS
Valence state
X-ray photoelectron spectra
Cobalt doping
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Snippet Zn1-xCoxO (0 < = x < = 0.15) thin films grown on Si (1 0 0) substrates were prepared by a sol-gel technique. The effects of Co doped on the structural, optical...
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SubjectTerms Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Physics
Title Influence of Co doping content on its valence state in Zn1―xCoxO (0 ≤ x ≤ 0.15) thin films
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