Variation of silicon melt viscosity with boron addition

• Published in: Journal of crystal growth Vol. 237; pp. 1667 - 1670
• Main Authors: Nishimura, Suzuka, Matsumoto, Satoru, Terashima, Kazutaka
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2002
• Subjects: A1. Impurities; B2. Semiconducting silicon; 66.20.+d; A1. Impurities; B2. Semiconducting silicon

The viscosity of silicon melts was measured by an oscillating cup technique. It has been found that the viscosity of silicon melts decreases by adding boron. The reduction of viscosity causes enhanced melt flow. This variation of melt flow enhances the chemical reaction between the silicon melt and...