Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature
We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at approximately 200 K, reverts to a new ((square root 3)x(square root 3))R30 degrees phase below 3...
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| Published in | Physical review letters Vol. 96; no. 12; p. 126103 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
31.03.2006
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| Abstract | We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at approximately 200 K, reverts to a new ((square root 3)x(square root 3))R30 degrees phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition, which is fully reversible. Angle-resolved photoemission experiments show that, concomitantly with the structural phase transition, a metal-insulator phase transition takes place. The ((square root 3)x(square root 3))R30 degrees ground state is interpreted as the formation of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice. |
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| AbstractList | We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at approximately 200 K, reverts to a new ((square root 3)x(square root 3))R30 degrees phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition, which is fully reversible. Angle-resolved photoemission experiments show that, concomitantly with the structural phase transition, a metal-insulator phase transition takes place. The ((square root 3)x(square root 3))R30 degrees ground state is interpreted as the formation of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice. |
| Author | Tejeda, A Kierren, B Malterre, D Didiot, C Michel, E G Mascaraque, A Cortés, R Lobo, J |
| Author_xml | – sequence: 1 givenname: R surname: Cortés fullname: Cortés, R organization: Departamento de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain – sequence: 2 givenname: A surname: Tejeda fullname: Tejeda, A – sequence: 3 givenname: J surname: Lobo fullname: Lobo, J – sequence: 4 givenname: C surname: Didiot fullname: Didiot, C – sequence: 5 givenname: B surname: Kierren fullname: Kierren, B – sequence: 6 givenname: D surname: Malterre fullname: Malterre, D – sequence: 7 givenname: E G surname: Michel fullname: Michel, E G – sequence: 8 givenname: A surname: Mascaraque fullname: Mascaraque, A |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/16605931$$D View this record in MEDLINE/PubMed |
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