Averaged equations for injection locked semiconductor lasers
An averaging method valid for strongly nonlinear oscillators is used for the first time to describe the pulsating intensity regimes of semiconductor lasers subject to injection. Slow-time equations are derived which are valid for solutions of arbitrary amplitude. These averaged equations do not requ...
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Published in | Physica. D Vol. 161; no. 3; pp. 220 - 236 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
15.01.2002
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Subjects | |
Online Access | Get full text |
ISSN | 0167-2789 1872-8022 |
DOI | 10.1016/S0167-2789(01)00375-X |
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Abstract | An averaging method valid for strongly nonlinear oscillators is used for the first time to describe the pulsating intensity regimes of semiconductor lasers subject to injection. Slow-time equations are derived which are valid for solutions of arbitrary amplitude. These averaged equations do not require the knowledge of a particular bifurcation point and are a good starting point for further analysis. Bifurcation points to periodic or quasiperiodic intensity oscillations are determined analytically by exploring certain limits of the parameters. Finally, we illustrate the strength and weakness of these expressions by comparing bifurcation diagrams obtained from the averaged equations and from the original laser equations. |
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AbstractList | An averaging method valid for strongly nonlinear oscillators is used for the first time to describe the pulsating intensity regimes of semiconductor lasers subject to injection. Slow-time equations are derived which are valid for solutions of arbitrary amplitude. These averaged equations do not require the knowledge of a particular bifurcation point and are a good starting point for further analysis. Bifurcation points to periodic or quasiperiodic intensity oscillations are determined analytically by exploring certain limits of the parameters. Finally, we illustrate the strength and weakness of these expressions by comparing bifurcation diagrams obtained from the averaged equations and from the original laser equations. |
Author | Erneux, Thomas Nizette, Michel Kovanis, Vassilios Gavrielides, Athanasios |
Author_xml | – sequence: 1 givenname: Michel surname: Nizette fullname: Nizette, Michel organization: Optique Nonlinéaire Théorique, Université Libre de Bruxelles, Bld. du Triomphe, Campus Plaine, C.P. 231, 1050 Bruxelles, Belgium – sequence: 2 givenname: Thomas surname: Erneux fullname: Erneux, Thomas email: terneux@ulb.ac.be organization: Optique Nonlinéaire Théorique, Université Libre de Bruxelles, Bld. du Triomphe, Campus Plaine, C.P. 231, 1050 Bruxelles, Belgium – sequence: 3 givenname: Athanasios surname: Gavrielides fullname: Gavrielides, Athanasios organization: Nonlinear Optics Group, Air Force Research Laboratory, 3550 Aberdeen Ave. SE, Kirtland AFB, Albuquerque, NM, 87117-5776, USA – sequence: 4 givenname: Vassilios surname: Kovanis fullname: Kovanis, Vassilios organization: Nonlinear Optics Group, Air Force Research Laboratory, 3550 Aberdeen Ave. SE, Kirtland AFB, Albuquerque, NM, 87117-5776, USA |
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Keywords | Averaged equations Injection locked semiconductor Hopf and torus bifurcations |
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Snippet | An averaging method valid for strongly nonlinear oscillators is used for the first time to describe the pulsating intensity regimes of semiconductor lasers... |
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SubjectTerms | Averaged equations Hopf and torus bifurcations Injection locked semiconductor |
Title | Averaged equations for injection locked semiconductor lasers |
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