Lateral gettering of iron and platinum by cavities induced by helium implantation in silicon
The aim of this study is to characterize the lateral gettering of iron and platinum atoms by introducing cavities at the periphery of large active device areas. Cavities have been obtained by helium implantation ( 5×10 16 He +/ cm 2 , 40 keV) followed by a thermal treatment on samples previously con...
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Published in | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 178; no. 1; pp. 184 - 187 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.05.2001
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Subjects | |
Online Access | Get full text |
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