Lateral gettering of iron and platinum by cavities induced by helium implantation in silicon

The aim of this study is to characterize the lateral gettering of iron and platinum atoms by introducing cavities at the periphery of large active device areas. Cavities have been obtained by helium implantation ( 5×10 16 He +/ cm 2 , 40 keV) followed by a thermal treatment on samples previously con...

Full description

Saved in:
Bibliographic Details
Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 178; no. 1; pp. 184 - 187
Main Authors Roqueta, F, Ventura, L, Grob, J.J, Jérisian, R
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2001
Subjects
Online AccessGet full text

Cover

Loading…