Lateral gettering of iron and platinum by cavities induced by helium implantation in silicon
The aim of this study is to characterize the lateral gettering of iron and platinum atoms by introducing cavities at the periphery of large active device areas. Cavities have been obtained by helium implantation ( 5×10 16 He +/ cm 2 , 40 keV) followed by a thermal treatment on samples previously con...
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Published in | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 178; no. 1; pp. 184 - 187 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.05.2001
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Abstract | The aim of this study is to characterize the lateral gettering of iron and platinum atoms by introducing cavities at the periphery of large active device areas. Cavities have been obtained by helium implantation (
5×10
16
He
+/
cm
2
, 40 keV) followed by a thermal treatment on samples previously contaminated by iron and platinum. These cavities are known to be efficient in trapping metallic impurities in silicon by chemisorption. The wafers were annealed in the range of 800–1000°C for several minutes in a neutral ambience (N
2). The metallic distribution has been monitored in each active device area by using current versus voltage and deep level transient spectroscopy techniques (DLTS). A symmetrical distribution of metallic impurities and current values has been observed in each active region. The influence of cavities extends laterally to several millimeters depending on the temperature and time of diffusion. This lateral gettering effect is suitable for the purification of transverse power devices. |
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AbstractList | The aim of this study is to characterize the lateral gettering of iron and platinum atoms by introducing cavities at the periphery of large active device areas. Cavities have been obtained by helium implantation (
5×10
16
He
+/
cm
2
, 40 keV) followed by a thermal treatment on samples previously contaminated by iron and platinum. These cavities are known to be efficient in trapping metallic impurities in silicon by chemisorption. The wafers were annealed in the range of 800–1000°C for several minutes in a neutral ambience (N
2). The metallic distribution has been monitored in each active device area by using current versus voltage and deep level transient spectroscopy techniques (DLTS). A symmetrical distribution of metallic impurities and current values has been observed in each active region. The influence of cavities extends laterally to several millimeters depending on the temperature and time of diffusion. This lateral gettering effect is suitable for the purification of transverse power devices. |
Author | Roqueta, F Ventura, L Jérisian, R Grob, J.J |
Author_xml | – sequence: 1 givenname: F surname: Roqueta fullname: Roqueta, F email: fabrice.roqueta@st.com organization: L.M.P., Université de Tours, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France 1 Correspondence address. 1 – sequence: 2 givenname: L surname: Ventura fullname: Ventura, L organization: L.M.P., Université de Tours, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France 1 Correspondence address. 1 – sequence: 3 givenname: J.J surname: Grob fullname: Grob, J.J organization: PHASE – CNRS, 23 rue du Loess, 67037 Strasbourg Cedex 2, France – sequence: 4 givenname: R surname: Jérisian fullname: Jérisian, R organization: L.M.P., Université de Tours, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France 1 Correspondence address. 1 |
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References | Myers, Follstaedt (BIB1) 1996; 79 Roqueta, Grob, Grob, Dubois, Faure, Ventura (BIB2) 1999; 69–70 Istratov, Hieslmair, Weber (BIB4) 1999; 69 K. Graff, in: U. Gonser, R.M. Osgood Jr., M.B. Panish, H. Sakaki (Eds.), Metal Impurities in Silicon-Device Fabrication, Springer Series in Materials Science, 1995, p. 68 Roqueta (10.1016/S0168-583X(00)00485-7_BIB2) 1999; 69–70 Istratov (10.1016/S0168-583X(00)00485-7_BIB4) 1999; 69 10.1016/S0168-583X(00)00485-7_BIB3 Myers (10.1016/S0168-583X(00)00485-7_BIB1) 1996; 79 |
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SubjectTerms | Cavities Gettering Helium Ion implantation Iron Platinum |
Title | Lateral gettering of iron and platinum by cavities induced by helium implantation in silicon |
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