Studies of p-GaN grown by MBE on GaAs(1 1 1)B

• Published in: Journal of crystal growth Vol. 189-190; pp. 516 - 518
• Main Authors: Foxon, C.T., Cheng, T.S., Jeffs, N.J., Dewsnip, J., Flannery, L., Orton, J.W., Harrison, I., Novikov, S.V., Ber, B.Ya, Kudriavtsev, Yu.A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.06.1998

We have investigated the properties of Mg-doped GaN grown by molecular beam epitaxy. Active nitrogen is produced by an Oxford Applied Research CARS25 plasma source. Further details of the methods used to grow the films have been presented elsewhere [1]. Growth rates are typically 0.3μm/h. Before gro...