Observation of antiferromagnetic coupling in δ-MnGa/(Mn,Ga,As)/δ-MnGa trilayers

We present the magnetic properties of δ-MnGa/(Mn,Ga,As)/δ-MnGa trilayers. The spacer layer consists of nominally 2 to 19 monolayers (ML) GaAs, but we have indications for an important incorporation of Mn and the possible formation of antiferromagnetic Mn 2As. Antiferromagnetic (AFM) coupling is obse...

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Bibliographic Details
Published inJournal of magnetism and magnetic materials Vol. 165; no. 1; pp. 149 - 152
Main Authors Van Roy, W., Akinaga, H., Miyanishi, S., Tanaka, K., Kuo, L.H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1997
Subjects
Exchange coupling
Semiconductor spacer
Thin films - trilayer
Exchange coupling
Semiconductor spacer
Thin films - trilayer
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Summary:We present the magnetic properties of δ-MnGa/(Mn,Ga,As)/δ-MnGa trilayers. The spacer layer consists of nominally 2 to 19 monolayers (ML) GaAs, but we have indications for an important incorporation of Mn and the possible formation of antiferromagnetic Mn 2As. Antiferromagnetic (AFM) coupling is observed for spacer layer thicknesses of 4 to 14 ML GaAs, ferromagnetic (FM) coupling exists outside this region. The largest observed coupling field was −87.0 mT (−870 Oe) at 17 K for a sample with a 12 ML spacer layer, causing a cross-over between both branches of the hysteresis loop and a negative remanence. In one sample (16 ML) the coupling changes from AFM at low temperature to FM at room temperature.
ISSN:0304-8853
DOI:10.1016/S0304-8853(96)00491-X