Optical and electronic properties of microcrystalline silicon deposited by hot-wire chemical vapor deposition

Microcrystalline silicon (μc-Si) films were deposited by hot-wire chemical vapor deposition (HWCVD) at ∼240°C with varied hydrogen dilution. Non-uniform growth was indicated by Raman and photoluminescence (PL) spectra using front- and back excitation. The electronic density of states was studied by...

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Bibliographic Details
Published inJournal of non-crystalline solids Vol. 266; pp. 274 - 278
Main Authors Han, Daxing, Habuchi, H, Hori, T, Nishibe, A, Namioka, T, Lin, Jing, Yue, Guozhen
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2000
Subjects
R110
M215
O110
L220
A200
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Summary:Microcrystalline silicon (μc-Si) films were deposited by hot-wire chemical vapor deposition (HWCVD) at ∼240°C with varied hydrogen dilution. Non-uniform growth was indicated by Raman and photoluminescence (PL) spectra using front- and back excitation. The electronic density of states was studied by optical absorption spectroscopy. An absorption peak at ∼1.25 eV appeared before any measurable crystallinity by Raman and PL. After the 520 cm −1 Raman mode appears, all the absorption spectra show a similar featureless lineshape. The broad photon emission spectra are consistent with the absorption curves.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(99)00835-2