Study of grain boundaries influence on electrical properties of nitrides
The electronic conduction mechanism through grain boundaries in heteroepitaxial gallium nitride layers was explained by applying the model, which included three effects: thermionic emission over potential barrier, thermionic field emission through potential barrier and thermionic field emission thro...
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Published in | Vacuum Vol. 82; no. 10; pp. 1034 - 1039 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
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Elsevier Ltd
03.06.2008
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Abstract | The electronic conduction mechanism through grain boundaries in heteroepitaxial gallium nitride layers was explained by applying the model, which included three effects: thermionic emission over potential barrier, thermionic field emission through potential barrier and thermionic field emission through scattering barrier. Space charge potential barriers height at the grain boundary layer was estimated to be 80
meV from the measurement of the temperature dependence of layer resistivity. Influence of the deep traps location in the different regions of active layers of the MSM detector on the device performance was evaluated by 2D numerical simulation. |
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AbstractList | The electronic conduction mechanism through grain boundaries in heteroepitaxial gallium nitride layers was explained by applying the model, which included three effects: thermionic emission over potential barrier, thermionic field emission through potential barrier and thermionic field emission through scattering barrier. Space charge potential barriers height at the grain boundary layer was estimated to be 80
meV from the measurement of the temperature dependence of layer resistivity. Influence of the deep traps location in the different regions of active layers of the MSM detector on the device performance was evaluated by 2D numerical simulation. |
Author | Paszkiewicz, B. Paszkiewicz, R. Tłaczała, M. Szyszka, A. |
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Cites_doi | 10.1002/1521-3951(200112)228:3<937::AID-PSSB937>3.0.CO;2-T 10.1063/1.1713025 10.1007/s11664-004-0274-8 10.1002/(SICI)1521-396X(199911)176:1<683::AID-PSSA683>3.0.CO;2-2 10.1063/1.326334 10.1016/S0022-0248(98)00240-1 10.1103/PhysRevLett.82.1237 10.1103/PhysRevB.45.10942 10.1016/S0022-0248(02)01815-8 10.1063/1.321593 10.1063/1.108823 10.1002/pssc.200564147 10.1103/PhysRevB.61.15573 10.1103/PhysRevB.33.3952 |
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SubjectTerms | GaN conduction mechanism Grain boundaries MSM detector Potential barriers |
Title | Study of grain boundaries influence on electrical properties of nitrides |
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