Evidence of quantum dot size uniformity in strain-coupled multilayered In(Ga)As/GaAs QDs grown with constant overgrowth percentage

• Published in: Journal of luminescence Vol. 192; pp. 562 - 566
• Main Authors: Panda, Debiprasad, Ahmad, Aijaz, Ghadi, Hemant, Adhikary, Sourav, Tongbram, Binita, Chakrabarti, Subhananda
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2017

Strain coupled multi-layer quantum dot (QD) structures are limited due to their non-uniform dot size distribution, as-grown defects and dislocations. Even with these limitations, they are subject of interest because of high optical and device efficiency. In this work, we propose a modified growth st...