Stacking order effects on the energetics and electronic properties of n-doped graphene/h-BN van der Waals heterostructures on SiC(0001)

• Published in: Carbon (New York) Vol. 213; p. 118244
• Main Authors: Deus, Dominike P. de Andrade, Lopes, João Marcelo J., Miwa, Roberto H.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.09.2023
• Subjects: Boron nitride; Doping; Graphene; Silicon carbide; Simulation; Stacking; Boron nitride; Silicon carbide; Simulation; Graphene; Stacking; Doping

Heterostructures based on the stacking of two-dimensional materials with different electronic properties have been the subject of several studies addressing the development of novel devices with multiple functionalities. Graphene (G)/hexagonal boron nitride (h-BN) van der Waals (vdW) systems have be...