Role of nanocrystal incrustation in the electrical conductivity of pm-SiGe:H thin films at room temperature

• Published in: Materials letters Vol. 342; p. 134346
• Main Authors: Ascencio-Hurtado, Carlos, Ambrosio, Roberto, Torres, Alfonso, Moreno, Mario, Ponce, Arturo, Candia-García, Filiberto, Arenas-Hernández, Alba
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2023
• Subjects: Nanocomposite; PECVD; Polymorphous silicon–germanium; Topographical contrast method; Nanocomposite; PECVD; Topographical contrast method; Polymorphous silicon–germanium

•pm-SiGe:H nanocomposite deposited by low-frequency PECVD.•Embedded nanocrystals (around 4 nm) in SiGe amorphous matrix were obtained.•Nanoparticles enhanced seven orders of magnitude the electrical conductivity.•Hydrogen dilution and Ge content plays an essential role in PECVD deposition. The produ...