Characterization of rare-earth oxysulfide E.L. complex center in ZnS thin film

This presentation of new rare-earth oxysulfide complex center in ZnS thin film opens future properties of the high field E.L. devices mainly because the new possibilities to carry out the trichromic. The properties of these new centers have been investigated with ZnS : Y 2O 2S(Eu) by F.L.N. and T.R....

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Published inJournal of luminescence Vol. 24; pp. 59 - 62
Main Authors Benalloul, P., Benoit, J., Barthou, C., Blanzat, B.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.1981
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Abstract This presentation of new rare-earth oxysulfide complex center in ZnS thin film opens future properties of the high field E.L. devices mainly because the new possibilities to carry out the trichromic. The properties of these new centers have been investigated with ZnS : Y 2O 2S(Eu) by F.L.N. and T.R.S. technics. Emission spectrum of Eu 3+ shows broad lines, the inhomogeneous broadning is connected with the fact that YEuO 2S complex center is frozen in ZnS thin film. Two sites are present with 120 μs and 420 μs life-times.
AbstractList This presentation of new rare-earth oxysulfide complex center in ZnS thin film opens future properties of the high field E.L. devices mainly because the new possibilities to carry out the trichromic. The properties of these new centers have been investigated with ZnS : Y 2O 2S(Eu) by F.L.N. and T.R.S. technics. Emission spectrum of Eu 3+ shows broad lines, the inhomogeneous broadning is connected with the fact that YEuO 2S complex center is frozen in ZnS thin film. Two sites are present with 120 μs and 420 μs life-times.
Author Benoit, J.
Blanzat, B.
Barthou, C.
Benalloul, P.
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Cites_doi 10.1103/PhysRevB.13.81
10.1103/PhysRevB.12.824
10.1103/PhysRevB.18.5816
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Title Characterization of rare-earth oxysulfide E.L. complex center in ZnS thin film
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