Effect of oxygen at the Cu–SiCxNy interface on electromigration performance of interconnect structures - Liniger, E.G.; Dziobkowski, C. (Thin solid films, 2006)
Keywords: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Diffusion in solids; Electromigration; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Microscopic defects (voids, inclusions, etc.); Physics; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Transport properties of condensed matter (nonelectronic); Oxygen; Annealing; Inorganic compounds; Growth rate; Silicon carbides; High temperature; Experimental study; Interconnections; AES; Voids; Interfaces; Transition elements; Growth mechanism; Silicon nitrides; Electrodiffusion; Copper; Performance; Activation energy