Van der Waals heterojunction interface passivation using ZnS nanolayer and enhanced photovoltaic behavior of semitransparent ultrathin 2D-MoS2/3D-chalcogenide solar cells
[Display omitted] •Semitransparent ultrathin 2D/3D vdW heterojunction solar cell using MoS2 and CIGSe.•2D-MoS2/CIGSe vdW solar cell performance was comparable to other vdW solar cells’.•Heterojunction interface passivation was realized by inserting ZnS nanolayer.•Comparison of 2D-MoS2/CIGSe solar ce...
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| Published in | Applied surface science Vol. 558; p. 149844 |
|---|---|
| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
30.08.2021
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| Subjects | |
| Online Access | Get full text |
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| Abstract | [Display omitted]
•Semitransparent ultrathin 2D/3D vdW heterojunction solar cell using MoS2 and CIGSe.•2D-MoS2/CIGSe vdW solar cell performance was comparable to other vdW solar cells’.•Heterojunction interface passivation was realized by inserting ZnS nanolayer.•Comparison of 2D-MoS2/CIGSe solar cell performance before and after passivation.•The passivated 2D-MoS2/ZnS/CIGSe structure overcame interfacial defects of TMDs.
Along with highly efficient Cu(In1-x,Gax)Se2 (CIGSe)-based thin-film solar cells, versatile solar cells are urgently required to meet a variety of functional needs, such as photovoltaic (PV) power conversion, transparency, ultrathinness, and light weight. To meet these needs, a semitransparent ultrathin (STUT) CIGSe solar cell with two-dimensional (2D) transition metal dichalcogenide (TMD) as the buffer layer is proposed as a prospective next-generation solar cell structure that exhibits advantages based on both the distinguishable optical properties of 2D TMDs and the high efficiency of CIGSe-based solar cells. However, the application of 2D TMDs on top of CIGSe is challenging because the surface of 2D TMDs is nominally and supposedly flat and smooth, while that of CIGSe absorbers is typically rough, and their combination is prone to defect formation at the interface. To overcome degradation due to interfacial defects, a 2D-MoS2/ZnS/CIGSe semitransparent ultrathin solar cell was designed by inserting a ZnS nanolayer for heterojunction interface passivation, and the photovoltaic properties of the device were found to be improved. Furthermore, based on the binding energies of each layer, the energy band structures of n-MoS2/p-CIGSe with and without a ZnS passivation layer are suggested, and the related implications for device performance are discussed. |
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| AbstractList | [Display omitted]
•Semitransparent ultrathin 2D/3D vdW heterojunction solar cell using MoS2 and CIGSe.•2D-MoS2/CIGSe vdW solar cell performance was comparable to other vdW solar cells’.•Heterojunction interface passivation was realized by inserting ZnS nanolayer.•Comparison of 2D-MoS2/CIGSe solar cell performance before and after passivation.•The passivated 2D-MoS2/ZnS/CIGSe structure overcame interfacial defects of TMDs.
Along with highly efficient Cu(In1-x,Gax)Se2 (CIGSe)-based thin-film solar cells, versatile solar cells are urgently required to meet a variety of functional needs, such as photovoltaic (PV) power conversion, transparency, ultrathinness, and light weight. To meet these needs, a semitransparent ultrathin (STUT) CIGSe solar cell with two-dimensional (2D) transition metal dichalcogenide (TMD) as the buffer layer is proposed as a prospective next-generation solar cell structure that exhibits advantages based on both the distinguishable optical properties of 2D TMDs and the high efficiency of CIGSe-based solar cells. However, the application of 2D TMDs on top of CIGSe is challenging because the surface of 2D TMDs is nominally and supposedly flat and smooth, while that of CIGSe absorbers is typically rough, and their combination is prone to defect formation at the interface. To overcome degradation due to interfacial defects, a 2D-MoS2/ZnS/CIGSe semitransparent ultrathin solar cell was designed by inserting a ZnS nanolayer for heterojunction interface passivation, and the photovoltaic properties of the device were found to be improved. Furthermore, based on the binding energies of each layer, the energy band structures of n-MoS2/p-CIGSe with and without a ZnS passivation layer are suggested, and the related implications for device performance are discussed. |
| ArticleNumber | 149844 |
| Author | Park, Joo Hyung Cho, Jun-Sik Kim, Dongryeol Kim, TaeWan Park, Jonghoo Shin, Sang Su Jo, Yonghee |
| Author_xml | – sequence: 1 givenname: Joo Hyung surname: Park fullname: Park, Joo Hyung email: joopark@kier.re.kr organization: Photovoltaics Research Department, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea – sequence: 2 givenname: Dongryeol surname: Kim fullname: Kim, Dongryeol organization: Photovoltaics Research Department, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea – sequence: 3 givenname: Sang Su surname: Shin fullname: Shin, Sang Su organization: Photovoltaics Research Department, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea – sequence: 4 givenname: Yonghee surname: Jo fullname: Jo, Yonghee organization: Photovoltaics Research Department, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea – sequence: 5 givenname: Jun-Sik surname: Cho fullname: Cho, Jun-Sik organization: Photovoltaics Research Department, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea – sequence: 6 givenname: Jonghoo surname: Park fullname: Park, Jonghoo organization: Department of Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea – sequence: 7 givenname: TaeWan surname: Kim fullname: Kim, TaeWan email: twkim@jbnu.ac.kr organization: Department of Electrical Engineering and Smart Grid Research Center, Jeonbuk National University, Jeonju 54896, Republic of Korea |
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| Keywords | van der Waals junction ZnS passivation Ultrathin Cu(In,Ga)Se2 2D MoS2 Semitransparent solar cell |
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•Semitransparent ultrathin 2D/3D vdW heterojunction solar cell using MoS2 and CIGSe.•2D-MoS2/CIGSe vdW solar cell performance was comparable... |
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| SubjectTerms | 2D MoS2 Semitransparent solar cell Ultrathin Cu(In,Ga)Se2 van der Waals junction ZnS passivation |
| Title | Van der Waals heterojunction interface passivation using ZnS nanolayer and enhanced photovoltaic behavior of semitransparent ultrathin 2D-MoS2/3D-chalcogenide solar cells |
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