Tuning the ZnO/GaN heterojunction for atmospheric NO abatement
[Display omitted] •Microstructure and defect concentration were optimized by annealing in air.•In-situ growth of ZnO and GaN(O) to form a heterojunction.•Discrete ZnO directed migration of hot charge carriers.•ZnO/(Ga, Zn)(N, O) exhibited efficient NO oxidation under visible light irradiation.•NO pr...
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Published in | Applied surface science Vol. 635; p. 157712 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
30.10.2023
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Subjects | |
Online Access | Get full text |
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