Tuning the ZnO/GaN heterojunction for atmospheric NO abatement

[Display omitted] •Microstructure and defect concentration were optimized by annealing in air.•In-situ growth of ZnO and GaN(O) to form a heterojunction.•Discrete ZnO directed migration of hot charge carriers.•ZnO/(Ga, Zn)(N, O) exhibited efficient NO oxidation under visible light irradiation.•NO pr...

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Bibliographic Details
Published inApplied surface science Vol. 635; p. 157712
Main Authors Yuan, Xuemei, Wu, Menglin, Ni, Jiupai, Cheng, Yongyi, Ni, Chengsheng
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.10.2023
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