The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface

We studied the structural and electronic properties of C-related defects on 4H-SiC (0001) surface by using first principle calculation, and also analyzed the effects of defect coverage and lateral lattice strain on formation and electronic properties of these defects. [Display omitted] •The structur...

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Published inApplied surface science Vol. 582; p. 152461
Main Authors Wei, Shengsheng, Yin, Zhipeng, Bai, Jiao, Xie, Weiwei, Qin, Fuwen, Su, Yan, Wang, Dejun
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.04.2022
Subjects
4H-SiC surface
Carbon-related point defects
Electronic properties
First principle
Formation energies
Carbon-related point defects
Electronic properties
First principle
Formation energies
4H-SiC surface
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Abstract We studied the structural and electronic properties of C-related defects on 4H-SiC (0001) surface by using first principle calculation, and also analyzed the effects of defect coverage and lateral lattice strain on formation and electronic properties of these defects. [Display omitted] •The structure and formation of C-related point defects on 4H-SiC (0001) surface are analyzed.•The electronic levels of C-related defects on 4H-SiC (0001) surface are clarified.•The effects of defect coverage and lateral lattice strain on structural and electronic properties of C-related defects on 4H-SiC (0001) surface are revealed. Carbon-related point defects on the 4H-SiC surface are essential for understanding the origin of defects at the SiO2/SiC interface and improving the quality of epitaxial materials. In this work, a first principle calculation was carried out to study the structural and electronic properties of carbon antisite (CSi), vacancy (VC) and interstitial defects (Ci1, Ci2, Ci3 and Ci4) on the 4H-SiC (0001) surface. The optimized structures showed that interstitial defects except Ci2 caused the surface reconstruction of 4H-SiC. The variation in formation energies with chemical potentials of the carbon for all defects indicated that the C-rich condition was beneficial to the formation of CSi, Ci1, Ci3 and Ci4, whereas the Si-rich condition was more favorable to VC. We also observed that these defects except Ci4 generated the corresponding defect energy levels in the bandgap of 4H-SiC by calculating the density of states and local charge densities. Furthermore, the effects of defect coverage and lateral lattice strain on structural and electronic properties of these defects were provided.
AbstractList We studied the structural and electronic properties of C-related defects on 4H-SiC (0001) surface by using first principle calculation, and also analyzed the effects of defect coverage and lateral lattice strain on formation and electronic properties of these defects. [Display omitted] •The structure and formation of C-related point defects on 4H-SiC (0001) surface are analyzed.•The electronic levels of C-related defects on 4H-SiC (0001) surface are clarified.•The effects of defect coverage and lateral lattice strain on structural and electronic properties of C-related defects on 4H-SiC (0001) surface are revealed. Carbon-related point defects on the 4H-SiC surface are essential for understanding the origin of defects at the SiO2/SiC interface and improving the quality of epitaxial materials. In this work, a first principle calculation was carried out to study the structural and electronic properties of carbon antisite (CSi), vacancy (VC) and interstitial defects (Ci1, Ci2, Ci3 and Ci4) on the 4H-SiC (0001) surface. The optimized structures showed that interstitial defects except Ci2 caused the surface reconstruction of 4H-SiC. The variation in formation energies with chemical potentials of the carbon for all defects indicated that the C-rich condition was beneficial to the formation of CSi, Ci1, Ci3 and Ci4, whereas the Si-rich condition was more favorable to VC. We also observed that these defects except Ci4 generated the corresponding defect energy levels in the bandgap of 4H-SiC by calculating the density of states and local charge densities. Furthermore, the effects of defect coverage and lateral lattice strain on structural and electronic properties of these defects were provided.
ArticleNumber 152461
Author Wang, Dejun
Xie, Weiwei
Wei, Shengsheng
Su, Yan
Qin, Fuwen
Yin, Zhipeng
Bai, Jiao
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  givenname: Fuwen
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  surname: Wang
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  email: dwang121@dlut.edu.cn
  organization: Key Laboratory of Intelligent Control and Optimization for Industrial Equipment (Dalian University of Technology), Ministry of Education, School of Control Science and Engineering, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China
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Cites_doi 10.1063/1.1564060
10.1063/1.4917528
10.1134/S1063782614100170
10.1038/ncomms8783
10.1103/PhysRevLett.77.3865
10.1016/j.mssp.2017.11.028
10.1016/j.apsusc.2014.01.063
10.1063/1.4922748
10.1016/0921-5107(95)01276-1
10.1063/1.2399307
10.4028/www.scientific.net/KEM.697.771
10.1063/1.5140692
10.1038/nature10562
10.1021/jp010499z
10.1016/j.physb.2010.05.043
10.1063/1.4886975
10.1016/j.apsusc.2011.07.012
10.1021/nl402544n
10.1016/j.apsusc.2014.12.116
10.1007/s10853-018-2220-9
10.4028/www.scientific.net/MSF.740-742.469
10.1039/D0TC05988A
10.1063/1.5089174
10.1016/j.apsusc.2021.149960
10.1088/1674-1056/27/4/047103
10.1038/nmat4145
10.1016/j.apsusc.2020.145837
10.1109/TED.2014.2358260
10.1016/j.cpc.2021.108033
10.1021/acs.jpcc.6b01493
10.1103/PhysRevApplied.15.034007
10.1063/1.4938242
10.1016/0927-0256(96)00008-0
10.1063/1.5143555
10.1021/jp210536m
10.1016/j.apsusc.2018.09.072
10.1016/j.apsusc.2021.149752
10.1007/s00339-018-2145-9
10.1016/j.apsusc.2020.147312
10.1063/1.5140731
10.1063/1.4991847
10.1016/j.apsusc.2020.145889
10.1016/j.apsusc.2017.08.173
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Keywords Carbon-related point defects
Electronic properties
First principle
Formation energies
4H-SiC surface
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References Yano, Kanafuji, Osawa, Hatayama, Fuyuki (b0015) 2015; 62
Porter, Davis (b0220) 1995; 34
Kobayashi, Harada, Kumagai, Oba, Matsushita (b0115) 2019; 125
Zhang, Yang, Su, Wang (b0165) 2020; 514
Li, Zhao, Wang (b0180) 2015; 5
Wang, Dongare (b0230) 2018; 53
Perdew, Burke, Ernzerhof (b0160) 1996; 77
Liu, Tuttle, Dhar (b0065) 2015; 2
Yang, Wei, Wang (b0035) 2021; 54
Lebedev, Kozlovski (b0050) 2014; 48
Fan, Cen, Cai, Liao, Xie, Xie (b0125) 2018; 427
Koehl, Buckley, Heremans, Calusine, Awschalom (b0045) 2011; 479
Kamiński, Budzich, Gaca, Michałowski, Kozłowski, Harmasz, Ciuk, Płocharski (b0080) 2021; 9
Yang, Yin, Zhang, Su, Qin, Wang (b0105) 2020; 513
Kresse, Furthmüller (b0150) 1996; 6
Schürmann, Dreiner, Berges, Westphal (b0085) 2006; 100
Lelis, Green, Habersat (b0025) 2018; 78
Ayedh, Nipoti, Hallén, Svensson (b0090) 2015; 107
Yin, Yang, Zhang, Su, Qin, Wang (b0075) 2020; 531
Wang, Xu, Liu, Tang, Geng (b0155) 2021; 267
Lohrmann, Iwamoto, Bodrog, Castelletto, Ohshima, Karle, Gali, Prawer, McCallum, Johnson (b0055) 2015; 6
Chokawa, Kato, Kamaiya, Shiraishi (b0245) 2013; 740–742
Ji, Tang, Sun, Zhong (b0205) 2010; 405
Torpo, Marlo, Staab, Nieminen (b0210) 2001; 13
Ciochoń, Bodek, Garb, Zając, Kołodziej (b0095) 2018; 124
Olander, Larsson (b0200) 2001; 105
Fiorenza, Bongiorno, Giannazzo, Alessandrino, Messina, Saggio, Roccaforte (b0020) 2021; 557
Liu, Huang, Zhu, Qin, Wang (b0215) 2014; 104
Matsushita, Furukawa, Hijikata, Ohshima (b0145) 2019; 464
Umeda, Kobayashi, Sometani, Yano, Matsushita, Harada (b0140) 2020; 116
Wang, Liu, Rothwell, Nevius, Tejeda, Taleb-Ibrahimi, Feldman, Cohen, Conrad (b0040) 2013; 13
Lin (b0195) 2012; 116
Dong, Li, Zhang, Tan, Hu, Zhou, Li, Yu, Li, Huang (b0010) 2021; 15
Kodigala, Chattopadhyay, Overton, Ardoin, Gordon, Johnstone, Roy, Barone (b0070) 2015; 330
Yan, Li, Kang, Wei, Huang (b0110) 2020; 127
Wang, Liu, Li, Hou, Xu, Wang, Qiao (b0135) 2017; 147
Cai, Wei, Yin, Bai, Xie, Li, Qin, Su, Wang (b0170) 2021; 560
Zhang, Yin, Su, Wang (b0190) 2018; 27
Gelczuk, Dąbrowska-Szata, Kolkovsky, Sochacki, Szmidt, Gotszalk (b0235) 2020; 127
Shao, Xu, Zhang, Liu, Li, Qiao (b0130) 2016; 697
Roma, Bruneval, Ting, Bedoya Martínez, Crocombette (b0120) 2012; 323–325
Glass, Reis, Bauernfeind, Aulbach, Scholz, Adler, Dudy, Li, Claessen, Schäfer (b0100) 2016; 120
Roccaforte, Fiorenza, Greco, Vivona, Nigro, Giannazzo, Patti, Saggio (b0005) 2014; 301
Widmann, Lee, Rendler, Son, Fedder, Paik, Yang, Zhao, Yang, Booker, Denisenko, Jamali, Momenzadeh, Gerhardt, Ohshima, Gali, Janzén, Wrachtrup (b0060) 2015; 14
Hatmanto, Kita (b0240) 2017; 11
Huang, Zhu, Gao, Qin, Wang (b0225) 2011; 257
Heyd, Scuseria, Ernzerhof (b0175) 2003; 118
Shen, Dhar, Pantelides (b0030) 2015; 106
Heyd, Scuseria, Ernzerhof (b0185) 2003; 118
Wang (10.1016/j.apsusc.2022.152461_b0230) 2018; 53
Shao (10.1016/j.apsusc.2022.152461_b0130) 2016; 697
Liu (10.1016/j.apsusc.2022.152461_b0065) 2015; 2
Yang (10.1016/j.apsusc.2022.152461_b0105) 2020; 513
Yang (10.1016/j.apsusc.2022.152461_b0035) 2021; 54
Chokawa (10.1016/j.apsusc.2022.152461_b0245) 2013; 740–742
Wang (10.1016/j.apsusc.2022.152461_b0040) 2013; 13
Glass (10.1016/j.apsusc.2022.152461_b0100) 2016; 120
Kamiński (10.1016/j.apsusc.2022.152461_b0080) 2021; 9
Lelis (10.1016/j.apsusc.2022.152461_b0025) 2018; 78
Liu (10.1016/j.apsusc.2022.152461_b0215) 2014; 104
Fiorenza (10.1016/j.apsusc.2022.152461_b0020) 2021; 557
Zhang (10.1016/j.apsusc.2022.152461_b0165) 2020; 514
Kobayashi (10.1016/j.apsusc.2022.152461_b0115) 2019; 125
Yano (10.1016/j.apsusc.2022.152461_b0015) 2015; 62
Torpo (10.1016/j.apsusc.2022.152461_b0210) 2001; 13
Wang (10.1016/j.apsusc.2022.152461_b0155) 2021; 267
Yan (10.1016/j.apsusc.2022.152461_b0110) 2020; 127
Schürmann (10.1016/j.apsusc.2022.152461_b0085) 2006; 100
Hatmanto (10.1016/j.apsusc.2022.152461_b0240) 2017; 11
Ayedh (10.1016/j.apsusc.2022.152461_b0090) 2015; 107
Roma (10.1016/j.apsusc.2022.152461_b0120) 2012; 323–325
Lebedev (10.1016/j.apsusc.2022.152461_b0050) 2014; 48
Kodigala (10.1016/j.apsusc.2022.152461_b0070) 2015; 330
Huang (10.1016/j.apsusc.2022.152461_b0225) 2011; 257
Shen (10.1016/j.apsusc.2022.152461_b0030) 2015; 106
Fan (10.1016/j.apsusc.2022.152461_b0125) 2018; 427
Dong (10.1016/j.apsusc.2022.152461_b0010) 2021; 15
Lohrmann (10.1016/j.apsusc.2022.152461_b0055) 2015; 6
Lin (10.1016/j.apsusc.2022.152461_b0195) 2012; 116
Koehl (10.1016/j.apsusc.2022.152461_b0045) 2011; 479
Cai (10.1016/j.apsusc.2022.152461_b0170) 2021; 560
Widmann (10.1016/j.apsusc.2022.152461_b0060) 2015; 14
Ji (10.1016/j.apsusc.2022.152461_b0205) 2010; 405
Yin (10.1016/j.apsusc.2022.152461_b0075) 2020; 531
Heyd (10.1016/j.apsusc.2022.152461_b0175) 2003; 118
Perdew (10.1016/j.apsusc.2022.152461_b0160) 1996; 77
Ciochoń (10.1016/j.apsusc.2022.152461_b0095) 2018; 124
Umeda (10.1016/j.apsusc.2022.152461_b0140) 2020; 116
Matsushita (10.1016/j.apsusc.2022.152461_b0145) 2019; 464
Heyd (10.1016/j.apsusc.2022.152461_b0185) 2003; 118
Olander (10.1016/j.apsusc.2022.152461_b0200) 2001; 105
Li (10.1016/j.apsusc.2022.152461_b0180) 2015; 5
Kresse (10.1016/j.apsusc.2022.152461_b0150) 1996; 6
Porter (10.1016/j.apsusc.2022.152461_b0220) 1995; 34
Gelczuk (10.1016/j.apsusc.2022.152461_b0235) 2020; 127
Zhang (10.1016/j.apsusc.2022.152461_b0190) 2018; 27
Wang (10.1016/j.apsusc.2022.152461_b0135) 2017; 147
Roccaforte (10.1016/j.apsusc.2022.152461_b0005) 2014; 301
References_xml – volume: 104
  year: 2014
  ident: b0215
  article-title: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Wang
– volume: 78
  start-page: 32
  year: 2018
  end-page: 37
  ident: b0025
  article-title: SiC MOSFET threshold-stability issues
  publication-title: Mater. Sci. Semicond. Process.
  contributor:
    fullname: Habersat
– volume: 127
  year: 2020
  ident: b0110
  article-title: First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC
  publication-title: J. Appl. Phys.
  contributor:
    fullname: Huang
– volume: 125
  year: 2019
  ident: b0115
  article-title: Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
  publication-title: J. Appl. Phys.
  contributor:
    fullname: Matsushita
– volume: 514
  year: 2020
  ident: b0165
  article-title: Carrier capture and emission properties of silicon interstitial defects in near SiC/SiO
  publication-title: Appl. Surf. Sci.
  contributor:
    fullname: Wang
– volume: 106
  year: 2015
  ident: b0030
  article-title: Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Pantelides
– volume: 100
  year: 2006
  ident: b0085
  article-title: Investigation of carbon contaminations in SiO
  publication-title: J. Appl. Phys.
  contributor:
    fullname: Westphal
– volume: 124
  start-page: 727
  year: 2018
  ident: b0095
  article-title: Si beam-assisted graphitization of SiC (0001)
  publication-title: Appl. Phys. A
  contributor:
    fullname: Kołodziej
– volume: 34
  start-page: 83
  year: 1995
  end-page: 105
  ident: b0220
  article-title: A critical review of ohmic and rectifying contacts for silicon carbide
  publication-title: Mater. Sci. Eng., B
  contributor:
    fullname: Davis
– volume: 257
  start-page: 10172
  year: 2011
  end-page: 10176
  ident: b0225
  article-title: Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma
  publication-title: Appl. Surf. Sci.
  contributor:
    fullname: Wang
– volume: 330
  start-page: 465
  year: 2015
  end-page: 475
  ident: b0070
  article-title: Growth and surface analysis of SiO
  publication-title: Appl. Surf. Sci.
  contributor:
    fullname: Barone
– volume: 48
  start-page: 1293
  year: 2014
  end-page: 1295
  ident: b0050
  article-title: Comparison of the radiation hardness of silicon and silicon carbide
  publication-title: Semiconductors
  contributor:
    fullname: Kozlovski
– volume: 13
  start-page: 6203
  year: 2001
  end-page: 6231
  ident: b0210
  article-title: Comprehensiveab initiostudy of properties of monovacancies and antisites in 4H-SiC
  publication-title: J. Phys.: Condens. Matter
  contributor:
    fullname: Nieminen
– volume: 147
  year: 2017
  ident: b0135
  article-title: Native point defects on hydrogen-passivated 4H-SiC (0001) surface and the effects on metal adsorptions
  publication-title: J. Chem. Phys.
  contributor:
    fullname: Qiao
– volume: 6
  start-page: 15
  year: 1996
  end-page: 50
  ident: b0150
  article-title: Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
  publication-title: Comput. Mater. Sci.
  contributor:
    fullname: Furthmüller
– volume: 557
  year: 2021
  ident: b0020
  article-title: Interfacial electrical and chemical properties of deposited SiO
  publication-title: Appl. Surf. Sci.
  contributor:
    fullname: Roccaforte
– volume: 62
  start-page: 324
  year: 2015
  end-page: 332
  ident: b0015
  article-title: Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
  publication-title: IEEE Trans. Electron Devices
  contributor:
    fullname: Fuyuki
– volume: 2
  year: 2015
  ident: b0065
  article-title: Silicon carbide: A unique platform for metal-oxide-semiconductor physics
  publication-title: Appl. Phys. Rev.
  contributor:
    fullname: Dhar
– volume: 531
  year: 2020
  ident: b0075
  article-title: Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors
  publication-title: Appl. Surf. Sci.
  contributor:
    fullname: Wang
– volume: 560
  year: 2021
  ident: b0170
  article-title: Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta
  publication-title: Appl. Surf. Sci.
  contributor:
    fullname: Wang
– volume: 11
  year: 2017
  ident: b0240
  article-title: Thermal-oxidation-induced local lattice distortion at surface of 4H-SiC(0001) characterized by in-plane X-ray diffractometry
  publication-title: Appl. Phys Express
  contributor:
    fullname: Kita
– volume: 513
  year: 2020
  ident: b0105
  article-title: Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors
  publication-title: Appl. Surf. Sci.
  contributor:
    fullname: Wang
– volume: 27
  start-page: 47103
  year: 2018
  ident: b0190
  article-title: Passivation of carbon dimer defects in amorphous SiO
  publication-title: Chin. Phys. B
  contributor:
    fullname: Wang
– volume: 6
  start-page: 7783
  year: 2015
  ident: b0055
  article-title: Single-photon emitting diode in silicon carbide
  publication-title: Nat. Commun.
  contributor:
    fullname: Johnson
– volume: 107
  year: 2015
  ident: b0090
  article-title: Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Svensson
– volume: 77
  start-page: 3865
  year: 1996
  end-page: 3868
  ident: b0160
  article-title: Generalized Gradient Approximation Made Simple
  publication-title: Phys. Rev. Lett.
  contributor:
    fullname: Ernzerhof
– volume: 427
  start-page: 851
  year: 2018
  end-page: 856
  ident: b0125
  article-title: The defects regulating for the electronic structure and optical properties of 4H-SiC with (0001) surface
  publication-title: Appl. Surf. Sci.
  contributor:
    fullname: Xie
– volume: 267
  year: 2021
  ident: b0155
  article-title: VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code
  publication-title: Comput. Phys. Commun.
  contributor:
    fullname: Geng
– volume: 14
  start-page: 164
  year: 2015
  end-page: 168
  ident: b0060
  article-title: Coherent control of single spins in silicon carbide at room temperature
  publication-title: Nat. Mater.
  contributor:
    fullname: Wrachtrup
– volume: 127
  year: 2020
  ident: b0235
  article-title: Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy
  publication-title: J. Appl. Phys.
  contributor:
    fullname: Gotszalk
– volume: 105
  start-page: 7619
  year: 2001
  end-page: 7623
  ident: b0200
  article-title: Influence of Adsorbed Species on the Reconstruction of 4H-SiC(0001) Surfaces
  publication-title: J. Phys. Chem. B
  contributor:
    fullname: Larsson
– volume: 301
  start-page: 9
  year: 2014
  end-page: 18
  ident: b0005
  article-title: Recent advances on dielectrics technology for SiC and GaN power devices
  publication-title: Appl. Surface Sci.
  contributor:
    fullname: Saggio
– volume: 9
  start-page: 4393
  year: 2021
  end-page: 4404
  ident: b0080
  article-title: Effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO2 films grown on 4H-SiC
  publication-title: J. Mater. Chem. C
  contributor:
    fullname: Płocharski
– volume: 120
  start-page: 10361
  year: 2016
  end-page: 10367
  ident: b0100
  article-title: Atomic-Scale Mapping of Layer-by-Layer Hydrogen Etching and Passivation of SiC(0001) Substrates
  publication-title: J. Phys. Chem. C
  contributor:
    fullname: Schäfer
– volume: 54
  year: 2021
  ident: b0035
  article-title: Bias temperature instability in SiC metal oxide semiconductor devices
  publication-title: J. Phys. D Appl. Phys.
  contributor:
    fullname: Wang
– volume: 13
  start-page: 4827
  year: 2013
  end-page: 4832
  ident: b0040
  article-title: Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC
  publication-title: Nano Lett.
  contributor:
    fullname: Conrad
– volume: 116
  start-page: 3951
  year: 2012
  end-page: 3955
  ident: b0195
  article-title: Light-Emitting Two-Dimensional Ultrathin Silicon Carbide
  publication-title: J. Phys. Chem. C
  contributor:
    fullname: Lin
– volume: 740–742
  start-page: 469
  year: 2013
  end-page: 472
  ident: b0245
  article-title: A New-Type of Defect Generation at a 4H-SiC/SiO
  publication-title: Mater. Sci. Forum
  contributor:
    fullname: Shiraishi
– volume: 5
  year: 2015
  ident: b0180
  article-title: Structural and electronic properties of the transition layer at the SiO
  publication-title: AIP Adv.
  contributor:
    fullname: Wang
– volume: 116
  year: 2020
  ident: b0140
  article-title: Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Harada
– volume: 118
  start-page: 8207
  year: 2003
  end-page: 8215
  ident: b0175
  article-title: Hybrid functionals based on a screened Coulomb potential
  publication-title: J. Chem. Phys.
  contributor:
    fullname: Ernzerhof
– volume: 118
  start-page: 8207
  year: 2003
  end-page: 8215
  ident: b0185
  article-title: Hybrid functionals based on a screened Coulomb potential
  publication-title: J. chem. phys.
  contributor:
    fullname: Ernzerhof
– volume: 405
  start-page: 3576
  year: 2010
  end-page: 3580
  ident: b0205
  article-title: Nucleation effect of Sia of 6H-SiC-(0001)–(√3×√3)R30° surface: First-principles study
  publication-title: Physica B
  contributor:
    fullname: Zhong
– volume: 53
  start-page: 9064
  year: 2018
  end-page: 9075
  ident: b0230
  article-title: Density functional theory study of electronic structure of defects and the role on the strain relaxation behavior of MoS
  publication-title: J. Mater. Sci.
  contributor:
    fullname: Dongare
– volume: 15
  year: 2021
  ident: b0010
  article-title: Atomistic Mechanism of 4H-SiC/SiO
  publication-title: Phys. Rev. Appl
  contributor:
    fullname: Huang
– volume: 323–325
  start-page: 11
  year: 2012
  end-page: 18
  ident: b0120
  article-title: Formation and Migration Energy of Native Defects in Silicon Carbide from First Principles: An Overview, Defect and Diffusion
  publication-title: Forum
  contributor:
    fullname: Crocombette
– volume: 479
  start-page: 84
  year: 2011
  end-page: 87
  ident: b0045
  article-title: Room temperature coherent control of defect spin qubits in silicon carbide
  publication-title: Nature
  contributor:
    fullname: Awschalom
– volume: 697
  start-page: 771
  year: 2016
  end-page: 776
  ident: b0130
  article-title: Formation Mechanisms of the Point Defects from the 4H-SiC (0001) Surface to the Interior Layers: First Principle Calculation
  publication-title: Key Eng. Mater.
  contributor:
    fullname: Qiao
– volume: 464
  start-page: 451
  year: 2019
  end-page: 454
  ident: b0145
  article-title: First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure
  publication-title: Appl. Surf. Sci.
  contributor:
    fullname: Ohshima
– volume: 118
  start-page: 8207
  issue: 18
  year: 2003
  ident: 10.1016/j.apsusc.2022.152461_b0185
  article-title: Hybrid functionals based on a screened Coulomb potential
  publication-title: J. chem. phys.
  doi: 10.1063/1.1564060
  contributor:
    fullname: Heyd
– volume: 106
  year: 2015
  ident: 10.1016/j.apsusc.2022.152461_b0030
  article-title: Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4917528
  contributor:
    fullname: Shen
– volume: 48
  start-page: 1293
  year: 2014
  ident: 10.1016/j.apsusc.2022.152461_b0050
  article-title: Comparison of the radiation hardness of silicon and silicon carbide
  publication-title: Semiconductors
  doi: 10.1134/S1063782614100170
  contributor:
    fullname: Lebedev
– volume: 6
  start-page: 7783
  year: 2015
  ident: 10.1016/j.apsusc.2022.152461_b0055
  article-title: Single-photon emitting diode in silicon carbide
  publication-title: Nat. Commun.
  doi: 10.1038/ncomms8783
  contributor:
    fullname: Lohrmann
– volume: 77
  start-page: 3865
  year: 1996
  ident: 10.1016/j.apsusc.2022.152461_b0160
  article-title: Generalized Gradient Approximation Made Simple
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.77.3865
  contributor:
    fullname: Perdew
– volume: 78
  start-page: 32
  year: 2018
  ident: 10.1016/j.apsusc.2022.152461_b0025
  article-title: SiC MOSFET threshold-stability issues
  publication-title: Mater. Sci. Semicond. Process.
  doi: 10.1016/j.mssp.2017.11.028
  contributor:
    fullname: Lelis
– volume: 13
  start-page: 6203
  year: 2001
  ident: 10.1016/j.apsusc.2022.152461_b0210
  article-title: Comprehensiveab initiostudy of properties of monovacancies and antisites in 4H-SiC
  publication-title: J. Phys.: Condens. Matter
  contributor:
    fullname: Torpo
– volume: 301
  start-page: 9
  year: 2014
  ident: 10.1016/j.apsusc.2022.152461_b0005
  article-title: Recent advances on dielectrics technology for SiC and GaN power devices
  publication-title: Appl. Surface Sci.
  doi: 10.1016/j.apsusc.2014.01.063
  contributor:
    fullname: Roccaforte
– volume: 2
  year: 2015
  ident: 10.1016/j.apsusc.2022.152461_b0065
  article-title: Silicon carbide: A unique platform for metal-oxide-semiconductor physics
  publication-title: Appl. Phys. Rev.
  doi: 10.1063/1.4922748
  contributor:
    fullname: Liu
– volume: 34
  start-page: 83
  year: 1995
  ident: 10.1016/j.apsusc.2022.152461_b0220
  article-title: A critical review of ohmic and rectifying contacts for silicon carbide
  publication-title: Mater. Sci. Eng., B
  doi: 10.1016/0921-5107(95)01276-1
  contributor:
    fullname: Porter
– volume: 100
  year: 2006
  ident: 10.1016/j.apsusc.2022.152461_b0085
  article-title: Investigation of carbon contaminations in SiO2 films on 4H-SiC(0001)
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.2399307
  contributor:
    fullname: Schürmann
– volume: 323–325
  start-page: 11
  year: 2012
  ident: 10.1016/j.apsusc.2022.152461_b0120
  article-title: Formation and Migration Energy of Native Defects in Silicon Carbide from First Principles: An Overview, Defect and Diffusion
  publication-title: Forum
  contributor:
    fullname: Roma
– volume: 697
  start-page: 771
  year: 2016
  ident: 10.1016/j.apsusc.2022.152461_b0130
  article-title: Formation Mechanisms of the Point Defects from the 4H-SiC (0001) Surface to the Interior Layers: First Principle Calculation
  publication-title: Key Eng. Mater.
  doi: 10.4028/www.scientific.net/KEM.697.771
  contributor:
    fullname: Shao
– volume: 127
  year: 2020
  ident: 10.1016/j.apsusc.2022.152461_b0110
  article-title: First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.5140692
  contributor:
    fullname: Yan
– volume: 479
  start-page: 84
  year: 2011
  ident: 10.1016/j.apsusc.2022.152461_b0045
  article-title: Room temperature coherent control of defect spin qubits in silicon carbide
  publication-title: Nature
  doi: 10.1038/nature10562
  contributor:
    fullname: Koehl
– volume: 105
  start-page: 7619
  year: 2001
  ident: 10.1016/j.apsusc.2022.152461_b0200
  article-title: Influence of Adsorbed Species on the Reconstruction of 4H-SiC(0001) Surfaces
  publication-title: J. Phys. Chem. B
  doi: 10.1021/jp010499z
  contributor:
    fullname: Olander
– volume: 405
  start-page: 3576
  year: 2010
  ident: 10.1016/j.apsusc.2022.152461_b0205
  article-title: Nucleation effect of Sia of 6H-SiC-(0001)–(√3×√3)R30° surface: First-principles study
  publication-title: Physica B
  doi: 10.1016/j.physb.2010.05.043
  contributor:
    fullname: Ji
– volume: 104
  year: 2014
  ident: 10.1016/j.apsusc.2022.152461_b0215
  article-title: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4886975
  contributor:
    fullname: Liu
– volume: 257
  start-page: 10172
  year: 2011
  ident: 10.1016/j.apsusc.2022.152461_b0225
  article-title: Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2011.07.012
  contributor:
    fullname: Huang
– volume: 13
  start-page: 4827
  year: 2013
  ident: 10.1016/j.apsusc.2022.152461_b0040
  article-title: Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC
  publication-title: Nano Lett.
  doi: 10.1021/nl402544n
  contributor:
    fullname: Wang
– volume: 118
  start-page: 8207
  year: 2003
  ident: 10.1016/j.apsusc.2022.152461_b0175
  article-title: Hybrid functionals based on a screened Coulomb potential
  publication-title: J. Chem. Phys.
  doi: 10.1063/1.1564060
  contributor:
    fullname: Heyd
– volume: 330
  start-page: 465
  year: 2015
  ident: 10.1016/j.apsusc.2022.152461_b0070
  article-title: Growth and surface analysis of SiO2 on 4H-SiC for MOS devices
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2014.12.116
  contributor:
    fullname: Kodigala
– volume: 53
  start-page: 9064
  year: 2018
  ident: 10.1016/j.apsusc.2022.152461_b0230
  article-title: Density functional theory study of electronic structure of defects and the role on the strain relaxation behavior of MoS2 bilayer structures
  publication-title: J. Mater. Sci.
  doi: 10.1007/s10853-018-2220-9
  contributor:
    fullname: Wang
– volume: 740–742
  start-page: 469
  year: 2013
  ident: 10.1016/j.apsusc.2022.152461_b0245
  article-title: A New-Type of Defect Generation at a 4H-SiC/SiO2 Interface by Oxidation Induced Compressive Strain
  publication-title: Mater. Sci. Forum
  doi: 10.4028/www.scientific.net/MSF.740-742.469
  contributor:
    fullname: Chokawa
– volume: 9
  start-page: 4393
  year: 2021
  ident: 10.1016/j.apsusc.2022.152461_b0080
  article-title: Effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric SiO2 films grown on 4H-SiC
  publication-title: J. Mater. Chem. C
  doi: 10.1039/D0TC05988A
  contributor:
    fullname: Kamiński
– volume: 125
  year: 2019
  ident: 10.1016/j.apsusc.2022.152461_b0115
  article-title: Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.5089174
  contributor:
    fullname: Kobayashi
– volume: 560
  year: 2021
  ident: 10.1016/j.apsusc.2022.152461_b0170
  article-title: Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2021.149960
  contributor:
    fullname: Cai
– volume: 27
  start-page: 47103
  year: 2018
  ident: 10.1016/j.apsusc.2022.152461_b0190
  article-title: Passivation of carbon dimer defects in amorphous SiO2/4H-SiC (0001) interface: A first-principles study
  publication-title: Chin. Phys. B
  doi: 10.1088/1674-1056/27/4/047103
  contributor:
    fullname: Zhang
– volume: 54
  year: 2021
  ident: 10.1016/j.apsusc.2022.152461_b0035
  article-title: Bias temperature instability in SiC metal oxide semiconductor devices
  publication-title: J. Phys. D Appl. Phys.
  contributor:
    fullname: Yang
– volume: 14
  start-page: 164
  year: 2015
  ident: 10.1016/j.apsusc.2022.152461_b0060
  article-title: Coherent control of single spins in silicon carbide at room temperature
  publication-title: Nat. Mater.
  doi: 10.1038/nmat4145
  contributor:
    fullname: Widmann
– volume: 513
  year: 2020
  ident: 10.1016/j.apsusc.2022.152461_b0105
  article-title: Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2020.145837
  contributor:
    fullname: Yang
– volume: 62
  start-page: 324
  year: 2015
  ident: 10.1016/j.apsusc.2022.152461_b0015
  article-title: Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2014.2358260
  contributor:
    fullname: Yano
– volume: 267
  year: 2021
  ident: 10.1016/j.apsusc.2022.152461_b0155
  article-title: VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code
  publication-title: Comput. Phys. Commun.
  doi: 10.1016/j.cpc.2021.108033
  contributor:
    fullname: Wang
– volume: 120
  start-page: 10361
  year: 2016
  ident: 10.1016/j.apsusc.2022.152461_b0100
  article-title: Atomic-Scale Mapping of Layer-by-Layer Hydrogen Etching and Passivation of SiC(0001) Substrates
  publication-title: J. Phys. Chem. C
  doi: 10.1021/acs.jpcc.6b01493
  contributor:
    fullname: Glass
– volume: 15
  year: 2021
  ident: 10.1016/j.apsusc.2022.152461_b0010
  article-title: Atomistic Mechanism of 4H-SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices
  publication-title: Phys. Rev. Appl
  doi: 10.1103/PhysRevApplied.15.034007
  contributor:
    fullname: Dong
– volume: 107
  year: 2015
  ident: 10.1016/j.apsusc.2022.152461_b0090
  article-title: Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4938242
  contributor:
    fullname: Ayedh
– volume: 6
  start-page: 15
  year: 1996
  ident: 10.1016/j.apsusc.2022.152461_b0150
  article-title: Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
  publication-title: Comput. Mater. Sci.
  doi: 10.1016/0927-0256(96)00008-0
  contributor:
    fullname: Kresse
– volume: 116
  year: 2020
  ident: 10.1016/j.apsusc.2022.152461_b0140
  article-title: Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.5143555
  contributor:
    fullname: Umeda
– volume: 116
  start-page: 3951
  year: 2012
  ident: 10.1016/j.apsusc.2022.152461_b0195
  article-title: Light-Emitting Two-Dimensional Ultrathin Silicon Carbide
  publication-title: J. Phys. Chem. C
  doi: 10.1021/jp210536m
  contributor:
    fullname: Lin
– volume: 464
  start-page: 451
  year: 2019
  ident: 10.1016/j.apsusc.2022.152461_b0145
  article-title: First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2018.09.072
  contributor:
    fullname: Matsushita
– volume: 5
  year: 2015
  ident: 10.1016/j.apsusc.2022.152461_b0180
  article-title: Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface
  publication-title: AIP Adv.
  contributor:
    fullname: Li
– volume: 11
  year: 2017
  ident: 10.1016/j.apsusc.2022.152461_b0240
  article-title: Thermal-oxidation-induced local lattice distortion at surface of 4H-SiC(0001) characterized by in-plane X-ray diffractometry
  publication-title: Appl. Phys Express
  contributor:
    fullname: Hatmanto
– volume: 557
  year: 2021
  ident: 10.1016/j.apsusc.2022.152461_b0020
  article-title: Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2021.149752
  contributor:
    fullname: Fiorenza
– volume: 124
  start-page: 727
  year: 2018
  ident: 10.1016/j.apsusc.2022.152461_b0095
  article-title: Si beam-assisted graphitization of SiC (0001)
  publication-title: Appl. Phys. A
  doi: 10.1007/s00339-018-2145-9
  contributor:
    fullname: Ciochoń
– volume: 531
  year: 2020
  ident: 10.1016/j.apsusc.2022.152461_b0075
  article-title: Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2020.147312
  contributor:
    fullname: Yin
– volume: 127
  year: 2020
  ident: 10.1016/j.apsusc.2022.152461_b0235
  article-title: Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.5140731
  contributor:
    fullname: Gelczuk
– volume: 147
  year: 2017
  ident: 10.1016/j.apsusc.2022.152461_b0135
  article-title: Native point defects on hydrogen-passivated 4H-SiC (0001) surface and the effects on metal adsorptions
  publication-title: J. Chem. Phys.
  doi: 10.1063/1.4991847
  contributor:
    fullname: Wang
– volume: 514
  year: 2020
  ident: 10.1016/j.apsusc.2022.152461_b0165
  article-title: Carrier capture and emission properties of silicon interstitial defects in near SiC/SiO2 interface region
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2020.145889
  contributor:
    fullname: Zhang
– volume: 427
  start-page: 851
  year: 2018
  ident: 10.1016/j.apsusc.2022.152461_b0125
  article-title: The defects regulating for the electronic structure and optical properties of 4H-SiC with (0001) surface
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2017.08.173
  contributor:
    fullname: Fan
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Snippet We studied the structural and electronic properties of C-related defects on 4H-SiC (0001) surface by using first principle calculation, and also analyzed the...
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StartPage 152461
SubjectTerms 4H-SiC surface
Carbon-related point defects
Electronic properties
First principle
Formation energies
Title The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface
URI https://dx.doi.org/10.1016/j.apsusc.2022.152461
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