Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
[Display omitted] •Implementation of Sb soaking/desorption interruption stages in GaAs(Sb)(N) SLs.•Compositional abruptness and surface roughness at both interfaces are evaluated.•Squarer profiles and smoother interfaces are got with longer interruption times.•Differences in quality improvements bet...
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| Published in | Applied surface science Vol. 604; p. 154596 |
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| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier B.V
01.12.2022
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| Abstract | [Display omitted]
•Implementation of Sb soaking/desorption interruption stages in GaAs(Sb)(N) SLs.•Compositional abruptness and surface roughness at both interfaces are evaluated.•Squarer profiles and smoother interfaces are got with longer interruption times.•Differences in quality improvements between the upper and lower interfaces.•Simulations with the 3LFKS model show a decrease in segregation energy.
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation, experimental Sb composition profiles differ greatly from the nominal square-wave design. In this work, the improvement of the interface quality of these SLs in terms of compositional abruptness and surface roughness has been evaluated by implementing different growth interruption times under Sb4/As4 (soaking) and As4 (desorption) overpressure conditions before and after the growth of GaAsSb layers, respectively. The combined effects of both processes enhance Sb distribution, achieving squarer compositional profiles with reduced surface roughness interfaces. It has been found that the improvement in compositional abruptness is quantitatively much higher at the lower interface, during soaking, than at the upper interface during desorption. Conversely, a larger decrease in surface roughness is achieved at the upper interface than at the lower interface. Fitting of the Sb segregation profiles using the 3-layer kinetic fluid model has shown that the increase in Sb incorporation rate is due to the decrease in segregation energy, presumably to changes in the surface reconstruction of the floating layer at the surface. |
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| AbstractList | [Display omitted]
•Implementation of Sb soaking/desorption interruption stages in GaAs(Sb)(N) SLs.•Compositional abruptness and surface roughness at both interfaces are evaluated.•Squarer profiles and smoother interfaces are got with longer interruption times.•Differences in quality improvements between the upper and lower interfaces.•Simulations with the 3LFKS model show a decrease in segregation energy.
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation, experimental Sb composition profiles differ greatly from the nominal square-wave design. In this work, the improvement of the interface quality of these SLs in terms of compositional abruptness and surface roughness has been evaluated by implementing different growth interruption times under Sb4/As4 (soaking) and As4 (desorption) overpressure conditions before and after the growth of GaAsSb layers, respectively. The combined effects of both processes enhance Sb distribution, achieving squarer compositional profiles with reduced surface roughness interfaces. It has been found that the improvement in compositional abruptness is quantitatively much higher at the lower interface, during soaking, than at the upper interface during desorption. Conversely, a larger decrease in surface roughness is achieved at the upper interface than at the lower interface. Fitting of the Sb segregation profiles using the 3-layer kinetic fluid model has shown that the increase in Sb incorporation rate is due to the decrease in segregation energy, presumably to changes in the surface reconstruction of the floating layer at the surface. |
| ArticleNumber | 154596 |
| Author | Gallego-Carro, A. Ruíz-Marín, N. Ulloa, J.M. Reyes, D.F. Braza, V. Stanojević, L. Flores, S. González, D. Gačević, Ž. Ben, T. |
| Author_xml | – sequence: 1 givenname: V. surname: Braza fullname: Braza, V. organization: University Research Institute on Electron Microscopy & Materials, (IMEYMAT) Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain – sequence: 2 givenname: T. surname: Ben fullname: Ben, T. organization: University Research Institute on Electron Microscopy & Materials, (IMEYMAT) Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain – sequence: 3 givenname: S. surname: Flores fullname: Flores, S. email: sara.flores@uca.es organization: University Research Institute on Electron Microscopy & Materials, (IMEYMAT) Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain – sequence: 4 givenname: D.F. surname: Reyes fullname: Reyes, D.F. organization: University Research Institute on Electron Microscopy & Materials, (IMEYMAT) Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain – sequence: 5 givenname: A. surname: Gallego-Carro fullname: Gallego-Carro, A. organization: Institute for Optoelectronic Systems and Microtechnology (ISOM), Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid, Spain – sequence: 6 givenname: L. surname: Stanojević fullname: Stanojević, L. organization: Institute for Optoelectronic Systems and Microtechnology (ISOM), Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid, Spain – sequence: 7 givenname: Ž. surname: Gačević fullname: Gačević, Ž. organization: Institute for Optoelectronic Systems and Microtechnology (ISOM), Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid, Spain – sequence: 8 givenname: N. surname: Ruíz-Marín fullname: Ruíz-Marín, N. organization: University Research Institute on Electron Microscopy & Materials, (IMEYMAT) Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain – sequence: 9 givenname: J.M. surname: Ulloa fullname: Ulloa, J.M. organization: Institute for Optoelectronic Systems and Microtechnology (ISOM), Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid, Spain – sequence: 10 givenname: D. surname: González fullname: González, D. organization: University Research Institute on Electron Microscopy & Materials, (IMEYMAT) Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain |
| BookMark | eNp9kE9PwjAYxhuDiYB-Aw_9Aht9226wiwkhiiRED-q56dq3WgLb0hYNfnqH8-zpOTx_8uQ3IaOmbZCQW2A5MChnu1x38RhNzhnnORSyqMoLMobFXGRFsZAjMu5jVSaF4FdkEuOOMeC9OyZqHdqv9EF9kzCEY5d829CYgk747jFS14bBc9ogbXv_4L_1b8o3dK2X8aWeneWJplOH2WZD47HDsNcpeYPxmlw6vY9486dT8vZw_7p6zLbP681quc2MYGXKSl0YyQUral7OFyVUmkstanDCSJDGSlc5C45VTtYWLGhruYCKcaiNZKUVUyKHXRPaGAM61QV_0OGkgKkzJLVTAyR1hqQGSH3tbqhh_-3TY1DReGwMWh_QJGVb___ADxM3dZ0 |
| CitedBy_id | crossref_primary_10_3390_nano13050798 crossref_primary_10_1016_j_apsusc_2023_158676 crossref_primary_10_1364_OE_528762 |
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| ContentType | Journal Article |
| Copyright | 2022 The Authors |
| Copyright_xml | – notice: 2022 The Authors |
| DBID | 6I. AAFTH AAYXX CITATION |
| DOI | 10.1016/j.apsusc.2022.154596 |
| DatabaseName | ScienceDirect Open Access Titles Elsevier:ScienceDirect:Open Access CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1873-5584 |
| ExternalDocumentID | 10_1016_j_apsusc_2022_154596 S0169433222021286 |
| GroupedDBID | --K --M -~X .~1 0R~ 1B1 1RT 1~. 1~5 23M 4.4 457 4G. 5GY 5VS 6I. 6J9 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAFTH AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AARLI AAXUO ABFNM ABFRF ABJNI ABMAC ABNEU ABXRA ABYKQ ACBEA ACDAQ ACFVG ACGFO ACGFS ACRLP ADBBV ADECG ADEZE AEBSH AEFWE AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AFZHZ AGHFR AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AIVDX AJOXV AJSZI ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BKOJK BLXMC CS3 EBS EFJIC EFLBG EO8 EO9 EP2 EP3 F5P FDB FIRID FLBIZ FNPLU FYGXN G-Q GBLVA IHE J1W KOM M24 M38 M41 MAGPM MO0 N9A O-L O9- OAUVE OGIMB OZT P-8 P-9 P2P PC. Q38 RNS ROL RPZ SCB SDF SDG SDP SES SMS SPC SPCBC SPD SPG SSK SSM SSQ SSZ T5K TN5 WH7 XPP ZMT ~02 ~G- AAQXK AAXKI AAYXX ABXDB ACNNM ADMUD AFJKZ AKRWK ASPBG AVWKF AZFZN BBWZM CITATION EJD FEDTE FGOYB G-2 HMV HVGLF HZ~ NDZJH R2- RIG SEW WUQ |
| ID | FETCH-LOGICAL-c306t-6a5c42305b2678619a24a3b1f3c414cd4f9fd1f09f4bd1d1add2319021bc406d3 |
| IEDL.DBID | AIKHN |
| ISSN | 0169-4332 |
| IngestDate | Thu Sep 26 15:42:36 EDT 2024 Fri Feb 23 02:36:15 EST 2024 |
| IsDoiOpenAccess | true |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Keywords | Sb segregation Growth interruptions And desorption Soaking Superlattices |
| Language | English |
| License | This is an open access article under the CC BY-NC-ND license. |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c306t-6a5c42305b2678619a24a3b1f3c414cd4f9fd1f09f4bd1d1add2319021bc406d3 |
| OpenAccessLink | https://www.sciencedirect.com/science/article/pii/S0169433222021286 |
| ParticipantIDs | crossref_primary_10_1016_j_apsusc_2022_154596 elsevier_sciencedirect_doi_10_1016_j_apsusc_2022_154596 |
| PublicationCentury | 2000 |
| PublicationDate | 2022-12-01 2022-12-00 |
| PublicationDateYYYYMMDD | 2022-12-01 |
| PublicationDate_xml | – month: 12 year: 2022 text: 2022-12-01 day: 01 |
| PublicationDecade | 2020 |
| PublicationTitle | Applied surface science |
| PublicationYear | 2022 |
| Publisher | Elsevier B.V |
| Publisher_xml | – name: Elsevier B.V |
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| SSID | ssj0012873 |
| Score | 2.4589853 |
| Snippet | [Display omitted]
•Implementation of Sb soaking/desorption interruption stages in GaAs(Sb)(N) SLs.•Compositional abruptness and surface roughness at both... |
| SourceID | crossref elsevier |
| SourceType | Aggregation Database Publisher |
| StartPage | 154596 |
| SubjectTerms | And desorption Growth interruptions Sb segregation Soaking Superlattices |
| Title | Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices |
| URI | https://dx.doi.org/10.1016/j.apsusc.2022.154596 |
| Volume | 604 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV07T8MwED71scCAeIryqDywmtRO0jRjVUFbEF1KpW6R7cSiSLRVk678du7qBBUJMTBFsWUp-pzcfXe--wJwJ7XN4tRIbqQxnCTQ8ZNShoeRb6WORCY1pQZeJt3RLHiah_MaDKpeGCqrLG2_s-k7a12OeCWa3nqx8KakI0LqW1KSTHmvW4cmuiPZa0CzP34eTb4PEzAo8J3Ed0wNQrLqoNuVeSkMRnPSMpSSsiwhqff_5qH2vM7jMRyVdJH13ROdQC1bnsLhnojgGSRDjKSLN0bCD5vNdmcCWF5UEhAMWambs8pkbIXzH2XvJQ6zoernU-3RZcIoH8vHY5Zv15TmK6gwLj-H2ePD62DEy98mcIP8v-BdFRokSZ1QS_REGCApGShfC-ubQAQmDWxsU2E7sQ10KlKBFg5JXowgaoPuPfUvoLFcLbNLYMonPqQlbmccmE7cUyKNLLp0KW1gbNwCXkGVrJ06RlKVjb0nDtqEoE0ctC2IKjyTH7ucoAH_c-XVv1dewwHduRKUG2gUm212i0Si0G2o33-Kdvm6fAE-7Mkn |
| link.rule.ids | 315,783,787,4509,24128,27936,27937,45597,45691 |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV09b8IwELUoDG2Hqp8q_fTQNYI4CcEjQoWkQBZAYrNsJ1apVEAk_P_e4aSiUtWhUyRblqJn--7d5e6FkBemTMZTzRzNtHZQAh2ulNROEHqGqdDNmMLUwCTpRHP_bREsaqRf9cJgWWVp-61N31vrcqRVotnaLJetKeqIoPoWYyhT3u0ckQawAQ63s9GLR1Hy_TEBggLPSnxzbBBiVQfdvsxLQjCao5YhY5hlCVC9_zcPdeB1BufkrKSLtGff6ILUstUlOT0QEbwiYgiRdPFOUfhhu93tTQDNi0oCggIrtXNG6oyuYf6z7L2EYTqUvXyqWvhIKOZjnTim-W6Dab4CC-PyazIfvM76kVP-NsHRwP8LpyMDDSSpHSgGnggCJMl86SnXeNp3fZ36hpvUNW1ufJW6qQsWDkgeBxCVBveeejekvlqvsltCpYd8SDHYTu7rNu9KNw0NuHTGjK8NbxKngkpsrDqGqMrGPoSFViC0wkLbJGGFp_ixywIM-J8r7_698pkcR7PJWIzjZHRPTnDGlqM8kHqx3WWPQCoK9VQemi8hSMsb |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Growth+interruption+strategies+for+interface+optimization+in+GaAsSb%2FGaAsN+type-II+superlattices&rft.jtitle=Applied+surface+science&rft.au=Braza%2C+V.&rft.au=Ben%2C+T.&rft.au=Flores%2C+S.&rft.au=Reyes%2C+D.F.&rft.date=2022-12-01&rft.pub=Elsevier+B.V&rft.issn=0169-4332&rft.eissn=1873-5584&rft.volume=604&rft_id=info:doi/10.1016%2Fj.apsusc.2022.154596&rft.externalDocID=S0169433222021286 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0169-4332&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0169-4332&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0169-4332&client=summon |