Grain-boundary/interface structures and scatterings of ruthenium and molybdenum metallization for low-resistance interconnects

• Published in: Applied surface science Vol. 629; p. 157440
• Main Authors: Chen, Yu-Lin, Fang, Yi-Ying, Lu, Ming-Yen, Keng, Pei Yuin, Chang, Shou-Yi
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 30.08.2023
• Subjects: FS-MS model; Grain boundary; Interconnect; Interface scattering; Metallization; Interconnect; FS-MS model; Metallization; Interface scattering; Grain boundary

[Display omitted] •The resistivity scaling of ruthenium and molybdenum films were investigated.•The bulk resistivity of the metal films was dominated by impurities (oxygen).•The grain-boundary reflectivity was controlled by the structure coherency.•Low electronegativity promoted interface bonding bu...