Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures

• Published in: Microelectronic engineering Vol. 83; no. 11-12; pp. 2277 - 2281
• Main Authors: MANKE, C, BOISSIERE, O, WEBER, U, BARBAR, G, BAUMANN, P. K, LINDNER, J, TAPAJNA, M, FRÖHLICH, K
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier Science 01.11.2006
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Materials; Atomic layer method; Trench technology; Ruthenium; Roughness; Transistor gate; Multiple layer; Step method; Atomic vapor deposition; Ruthenium oxide; Aspect ratio; Thin film; AVD; Vapor deposition; Sheet resistivity; Metal gate stack; Root mean square value; Smooth surface; Wafer

Using beta-diketonate Ru precursors diluted in n-octane Ru and RuO2 layers were grown on plane 200 nm SiO2/Si wafers by atomic vapor deposition (AVD). AVD was carried out in an AIXTRON Tricent system using liquid delivery of the ruthenium precursor. The deposited multi-crystalline smooth (RMS surfac...