Facile synthesis of large-area and highly crystalline WS2 film on dielectric surfaces for SERS

• Published in: Journal of alloys and compounds Vol. 666; pp. 412 - 418
• Main Authors: Li, Zhen, Jiang, Shouzhen, Xu, Shicai, Zhang, Chao, Qiu, Hengwei, Chen, Peixi, Gao, Saisai, Man, Baoyuan, Yang, Cheng, Liu, Mei
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 05.05.2016
• Subjects: Layered materials; SERS; Transition metal dichalcogenides; Tungsten disulfide; Two-dimensional materials; Two-dimensional materials; Layered materials; Transition metal dichalcogenides; SERS; Tungsten disulfide

A facile fabrication of high-quality and large-area tungsten disulfide (WS2) layers is demonstrated using a thermal decomposition of tetrathiotungstates ((NH4)2WS4) with two annealing process. During synthesis, the first annealing step is utilized to achieve lateral epitaxial growth of the WS2 and c...