Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices

Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells....

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Bibliographic Details
Published inIEEE electron device letters Vol. 36; no. 9; pp. 975 - 977
Main Authors Hosseini, Peiman, Sebastian, Abu, Papandreou, Nikolaos, Wright, C. David, Bhaskaran, Harish
Format Journal Article
LanguageEnglish
Published IEEE 01.09.2015
Subjects
Field effect transistors
neuromorphic computing
non-von Neumann
Performance evaluation
Phase change materials
Phase change memory
Reliability
Resistance
Switches
Phase-change materials
non-von Neumann
arithmetic computing
neuromorphic computing
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Summary:Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2457243