Theoretical electronic structure and perturbations in SiS

Wavefunctions, SCF-CI energies, and spectroscopic constants of low-lying electronic states of SiS have been computed. Ab initio calculations of parameters characteristic of the perturbations occurring between the valence states of SiS have been performed. The results present, as in SiO, a large diff...

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Bibliographic Details
Published inJournal of molecular spectroscopy Vol. 85; no. 1; pp. 215 - 224
Main Authors Robbe, J.M., Lefebvre-Brion, H., Gottscho, R.A.
Format Journal Article
LanguageEnglish
Published Elsevier Inc 1981
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