Kinetic study of electronically excited silicon atoms, Si(3p 2( 1S 0)), by time-resolved attenuation of atomic resonance radiation

• Published in: Chemical physics letters Vol. 51; no. 2; pp. 206 - 210
• Main Authors: Husain, D., Norris, P.E.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.1977

The collisional behaviour of electronically excited silicon atoms in the 3p 2( 1S 0) state, 1.909 eV above the 3p 2( 3P 0) ground state, is investigated by time-resolved attenuation of atomic resonance radiation at λ = 390.53 nm (4s( 1P o 1)←3p 2 ( 1S 0)). The optically metastable Si(3 1S 0) atoms w...