Pyramidal quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy

We have fabricated AlGaAs GaAs quantum dot structures using selective area metalorganic vapor phase epitaxy (MOVPE). First, GaAs pyramidal structures with four-fold symmetric [lcub]011[rcub] facet side walls are formed on SiN x masked (001) GaAs with square openings. After the pyramidal structures w...

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Published inSolid-state electronics Vol. 40; no. 1; pp. 799 - 802
Main Authors Fukui, T, Kumakura, K, Nakakoshi, K, Motohisa, J
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 1996
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Abstract We have fabricated AlGaAs GaAs quantum dot structures using selective area metalorganic vapor phase epitaxy (MOVPE). First, GaAs pyramidal structures with four-fold symmetric [lcub]011[rcub] facet side walls are formed on SiN x masked (001) GaAs with square openings. After the pyramidal structures were completely formed, no growth occurs on the top or side walls of the pyramids. Furthermore, the shape and width of the top area observed by a scanning electron microscope (SEM) and an atomic force microscope (AFM) is shown to be highly uniform. This indicates that self-limited growth occurs. Next, using these uniform pyramids, GaAs quantum dots are overgrown on top of the pyramids using different growth conditions. Sharp photoluminescence (PL) spectra are observed from uniform quantum dots.
AbstractList We have fabricated AlGaAs GaAs quantum dot structures using selective area metalorganic vapor phase epitaxy (MOVPE). First, GaAs pyramidal structures with four-fold symmetric [lcub]011[rcub] facet side walls are formed on SiN x masked (001) GaAs with square openings. After the pyramidal structures were completely formed, no growth occurs on the top or side walls of the pyramids. Furthermore, the shape and width of the top area observed by a scanning electron microscope (SEM) and an atomic force microscope (AFM) is shown to be highly uniform. This indicates that self-limited growth occurs. Next, using these uniform pyramids, GaAs quantum dots are overgrown on top of the pyramids using different growth conditions. Sharp photoluminescence (PL) spectra are observed from uniform quantum dots.
Author Nakakoshi, K
Fukui, T
Kumakura, K
Motohisa, J
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CitedBy_id crossref_primary_10_1143_JJAP_38_L563
crossref_primary_10_1103_PhysRevB_58_7151
crossref_primary_10_1016_S0022_0248_02_00905_3
crossref_primary_10_1143_JJAP_38_343
crossref_primary_10_1016_j_jcrysgro_2010_12_084
crossref_primary_10_3390_photonics11040370
crossref_primary_10_1143_JJAP_38_1067
Cites_doi 10.1016/0022-0248(91)90592-S
10.1063/1.103487
10.1016/0022-0248(93)90822-E
10.1063/1.105026
10.1049/el:19890282
10.1063/1.110041
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References Fukui, Ando (BIB1) 1989; 16
Nagamune, Tsukamoto, Nishioka, Arakawa (BIB4) 1993; 126
Tsukamoto, Nagamune, Nishioka, Arakawa (BIB3) 1993; 63
Fukui, Ando, Fukai (BIB5) 1990; 57
Fukui, Ando, Tokura, Toriyama (BIB2) 1991; 58
Kayser (BIB6) 1991; 107
Tsukamoto (10.1016/0038-1101(95)00365-7_BIB3) 1993; 63
Nagamune (10.1016/0038-1101(95)00365-7_BIB4) 1993; 126
Fukui (10.1016/0038-1101(95)00365-7_BIB2) 1991; 58
Fukui (10.1016/0038-1101(95)00365-7_BIB1) 1989; 16
Fukui (10.1016/0038-1101(95)00365-7_BIB5) 1990; 57
Kayser (10.1016/0038-1101(95)00365-7_BIB6) 1991; 107
References_xml – volume: 63
  start-page: 355
  year: 1993
  ident: BIB3
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Arakawa
– volume: 107
  start-page: 989
  year: 1991
  ident: BIB6
  publication-title: J. Cryst. Growth
  contributor:
    fullname: Kayser
– volume: 16
  start-page: 410
  year: 1989
  ident: BIB1
  publication-title: Electron. Lett.
  contributor:
    fullname: Ando
– volume: 57
  start-page: 1209
  year: 1990
  ident: BIB5
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Fukai
– volume: 58
  start-page: 2018
  year: 1991
  ident: BIB2
  publication-title: Appl. Phys. Lett.
  contributor:
    fullname: Toriyama
– volume: 126
  start-page: 707
  year: 1993
  ident: BIB4
  publication-title: J. Cryst. Growth
  contributor:
    fullname: Arakawa
– volume: 107
  start-page: 989
  year: 1991
  ident: 10.1016/0038-1101(95)00365-7_BIB6
  publication-title: J. Cryst. Growth
  doi: 10.1016/0022-0248(91)90592-S
  contributor:
    fullname: Kayser
– volume: 57
  start-page: 1209
  year: 1990
  ident: 10.1016/0038-1101(95)00365-7_BIB5
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.103487
  contributor:
    fullname: Fukui
– volume: 126
  start-page: 707
  year: 1993
  ident: 10.1016/0038-1101(95)00365-7_BIB4
  publication-title: J. Cryst. Growth
  doi: 10.1016/0022-0248(93)90822-E
  contributor:
    fullname: Nagamune
– volume: 58
  start-page: 2018
  year: 1991
  ident: 10.1016/0038-1101(95)00365-7_BIB2
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.105026
  contributor:
    fullname: Fukui
– volume: 16
  start-page: 410
  year: 1989
  ident: 10.1016/0038-1101(95)00365-7_BIB1
  publication-title: Electron. Lett.
  doi: 10.1049/el:19890282
  contributor:
    fullname: Fukui
– volume: 63
  start-page: 355
  year: 1993
  ident: 10.1016/0038-1101(95)00365-7_BIB3
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.110041
  contributor:
    fullname: Tsukamoto
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