Use of molecular beam epitaxy for high-power AlGaAs laser production

The results of statistical analysis of the characteristics of high-power semiconductor lasers grown by molecular beam epitaxy are presented. Three types of heterostructures are compared. It is shown that widening of a graded refractive index (GRIN) waveguide layer thickness from the standard value o...

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Bibliographic Details
Published inJournal of crystal growth Vol. 150; pp. 1350 - 1353
Main Authors Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu, Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu, Shkurko, A.P., Ter-Martirosyan, A.L.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1995
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Summary:The results of statistical analysis of the characteristics of high-power semiconductor lasers grown by molecular beam epitaxy are presented. Three types of heterostructures are compared. It is shown that widening of a graded refractive index (GRIN) waveguide layer thickness from the standard value of 0.4 to 0.6 μm results in increased average differential quantum efficiency of the lasers. In addition, use of a 100 Å single quantum well decreases the scatter of the laser diode threshold current density as compared with the structures having a quantum well thickness of 200 Å.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)80158-9