Stabilization of diamond relative to different substrate—carbon interfaces: a nucleation model for CVD diamond growth based on a charge transfer consideration

The interaction between the carbon phase and the substrate is the determining factor in chemically vapor deposited diamond thin film growth processes. Considering the similarity between (1,1,1) diamond planes and (0,0,0,1) graphite planes, we present calculation results concerning the stabilization...

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Published inDiamond and related materials Vol. 3; no. 4; pp. 448 - 451
Main Authors Sandré, Eric, Bonnot, Anne-Marie, Cyrot-Lackmann, Françoise
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.1994
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Abstract The interaction between the carbon phase and the substrate is the determining factor in chemically vapor deposited diamond thin film growth processes. Considering the similarity between (1,1,1) diamond planes and (0,0,0,1) graphite planes, we present calculation results concerning the stabilization geometry in respect with interfacial charge transfer between a substrate and or a graphite sheet. We then propose a nucleation model for CVD diamond films based on corrugated graphite precursors.
AbstractList The interaction between the carbon phase and the substrate is the determining factor in chemically vapor deposited diamond thin film growth processes. Considering the similarity between (1,1,1) diamond planes and (0,0,0,1) graphite planes, we present calculation results concerning the stabilization geometry in respect with interfacial charge transfer between a substrate and or a graphite sheet. We then propose a nucleation model for CVD diamond films based on corrugated graphite precursors.
Author Bonnot, Anne-Marie
Sandré, Eric
Cyrot-Lackmann, Françoise
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10.1016/S0081-1947(08)60505-6
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