Unipolar transport and shot noise in metal–semiconductor–metal structures
We carry out a self-consistent analytical theory of unipolar current and noise properties of metal–semiconductor–metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including the effects of the diffusion current we succeed in studying...
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| Published in | Journal of applied physics Vol. 93; no. 1; pp. 375 - 383 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
American Institute of Physics
01.01.2003
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| Subjects | |
| Online Access | Get full text |
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| Abstract | We carry out a self-consistent analytical theory of unipolar current and noise properties of metal–semiconductor–metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including the effects of the diffusion current we succeed in studying the whole range of carrier injection conditions going from low level injection, where the structure behaves as a linear resistor, to high level injection, where the structure behaves as a space charge limited diode. We show that these structures display shot noise at the highest voltages. Remarkably the crossover from Nyquist noise to shot noise exhibits a complicated behavior with increasing current where an initial square root dependence (double thermal noise) is followed by a cubic power law. |
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| AbstractList | We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including the effects of the diffusion current we succeed in studying the whole range of carrier injection conditions going from low level injection, where the structure behaves as a linear resistor, to high level injection, where the structure behaves as a space charge limited diode. We show that these structures display shot noise at the highest voltages. Remarkably the crossover from Nyquist noise to shot noise exhibits a complicated behavior with increasing current where an initial square root dependence (double thermal noise) is followed by a cubic power law. |
| Author | Cantalapiedra, I. R. Reggiani, L. Gomila, G. |
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| CitedBy_id | crossref_primary_10_1103_PhysRevLett_92_226601 crossref_primary_10_1002_adts_202200696 crossref_primary_10_1063_1_4928424 |
| Cites_doi | 10.1063/1.367024 10.1109/16.333806 10.1103/PhysRev.32.110 10.1016/S0378-4371(96)00229-4 10.1016/S0080-8784(08)60266-5 10.1063/1.321747 10.1063/1.119151 10.1063/1.370839 10.1063/1.367023 10.1002/pssb.2220700102 10.1002/pssb.2220700202 10.1103/PhysRevE.56.1490 10.1063/1.1149785 10.1063/1.321746 10.1103/PhysRevB.62.8068 10.1063/1.101208 |
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| Contributor | Universitat de Barcelona |
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| Copyright | (c) American Institute of Physics, 2003 info:eu-repo/semantics/openAccess |
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| Snippet | We carry out a self-consistent analytical theory of unipolar current and noise properties of metal–semiconductor–metal structures made of highly resistive... We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive... |
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| SubjectTerms | Condensed matter Electronic structure Estructura electrònica Matèria condensada |
| Title | Unipolar transport and shot noise in metal–semiconductor–metal structures |
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