Surface core level shifts in III–V semiconductors: a high resolution photoemission study

• Published in: Journal of electron spectroscopy and related phenomena Vol. 76; pp. 139 - 144
• Main Authors: Ottaviani, C., Capozi, M., Quaresima, C., Matteucci, M., Crotti, C., Perfetti, P., Astaldi, C., Zacchigna, M., Comicioli, C., Evans, M., Prince, K.C.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 29.12.1995

We have performed photoemission experiments to determine the surface versus bulk contributions of In4 d, Ga 3 d and P 2 p core level spectra in InP and GaP. The experiments were performed at the new VUV High Energy Resolution Photoemission beamline at the storage ring ELETTRA in Trieste. We obtained...