Mott Memristors for Neuromorphics

• Published in: Advanced Physics Research Vol. 4; no. 4
• Main Authors: Zhao, Zherui, Luan, Wanhong, Zhai, Yongbiao, Lv, Ziyu, Zhang, Meng, Yan, Yan, Xue, Shuangmei, Zhou, Kui, Ding, Guanglong, Han, Su‐Ting, Roy, Vellaisamy A. L., Zhou, Ye
• Format: Journal Article
• Language: English
• Published: Edinburgh John Wiley & Sons, Inc 01.04.2025; Wiley-VCH
• Subjects: artificial neurons; Bandwidths; Behavior; Electrons; Energy; Insulators; Material properties; Memristors; mott insulators; Neural networks; Neuromorphic computing; neuromorphics; Neurons; Phase transitions

Neuromorphic computing has emerged as a key solution for overcoming the challenge of von Neumann bottleneck, offering a pathway to more efficient and biologically inspired computing systems. A crucial advancement in this field is the utilization of Mott insulators, where the metal‐insulator transiti...