Ferroelectric [HfO 2 /ZrO 2 ] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability

• Published in: Advanced Physics Research Vol. 2; no. 9
• Main Authors: Lehninger, David, Prabhu, Aditya, Sünbül, Ayse, Ali, Tarek, Schöne, Fred, Kämpfe, Thomas, Biedermann, Kati, Roy, Lisa, Seidel, Konrad, Lederer, Maximilian, Eng, Lukas M.
• Format: Journal Article
• Language: English
• Published: Edinburgh John Wiley & Sons, Inc 01.09.2023; Wiley-VCH
• Subjects: coercive fields; Coercivity; Dopants; Electric fields; Ferroelectric materials; Ferroelectricity; Ferroelectrics; Field effect transistors; Grain size; Hafnium oxide; hafnium zirconium oxide; High temperature; nanolaminates; Parameters; Periodic structures; Polarization; Random access memory; Semiconductor devices; Silicon wafers; Solid solutions; Superlattices; System reliability; Thickness; Zirconium dioxide

Modern microelectronic systems and applications demand an every increasing amount of non‐volatile memories that are fast, reliable, and consume little power. Memory concepts based on ferroelectric HfO 2 like the ferroelectric field effect transistor (FeFET) and the ferroelectric random access memory...