Electronic structure, optical and thermoelectric properties of cadmium chalcogenides monolayers
Multifunctional low dimensional materials have been subjects of extensive investigations because of their unique physical and chemical properties. In this paper, we report a detailed analysis estimating the electronic structure, optical and thermoelectric properties of the cadmium chalcogenides CdX...
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Published in | Optik (Stuttgart) Vol. 210; p. 164567 |
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Abstract | Multifunctional low dimensional materials have been subjects of extensive investigations because of their unique physical and chemical properties. In this paper, we report a detailed analysis estimating the electronic structure, optical and thermoelectric properties of the cadmium chalcogenides CdX (X = S, Se and Te) monolayers using first-principles calculations. Results show that the CdS single layer is a direct gap semiconductor, while CdSe and CdTe monolayers have indirect band gap. As a function of the chalcogenide the band gap decreases from CdS to CdTe as a consequence of the s–p interaction. The CdX monolayers dielectric function and optical absorption coefficient are computed in a wide energy range up to 20 eV. All three single layers appear to be promising materials for optoelectronic applications provided that they have wide absorption band from visible to ultraviolet regime with large absorption coefficient up to 75.928, 70.355 and 71.193 (104/cm) for CdS, CdSe and CdTe monolayers, respectively. Finally, the CdX monolayers thermoelectric properties are calculated and analyzed as a function of temperature up to 1200 K. The single layers at hand show good thermoelectric performance provided that they exhibit large figure of merit. Interestingly, the CdTe monolayer exhibits a figure of merit larger than unity for temperatures up to 500 K. We believe that results reported here may be useful for designing practical applications of the cadmium chalcogenides monolayers. |
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AbstractList | Multifunctional low dimensional materials have been subjects of extensive investigations because of their unique physical and chemical properties. In this paper, we report a detailed analysis estimating the electronic structure, optical and thermoelectric properties of the cadmium chalcogenides CdX (X = S, Se and Te) monolayers using first-principles calculations. Results show that the CdS single layer is a direct gap semiconductor, while CdSe and CdTe monolayers have indirect band gap. As a function of the chalcogenide the band gap decreases from CdS to CdTe as a consequence of the s–p interaction. The CdX monolayers dielectric function and optical absorption coefficient are computed in a wide energy range up to 20 eV. All three single layers appear to be promising materials for optoelectronic applications provided that they have wide absorption band from visible to ultraviolet regime with large absorption coefficient up to 75.928, 70.355 and 71.193 (104/cm) for CdS, CdSe and CdTe monolayers, respectively. Finally, the CdX monolayers thermoelectric properties are calculated and analyzed as a function of temperature up to 1200 K. The single layers at hand show good thermoelectric performance provided that they exhibit large figure of merit. Interestingly, the CdTe monolayer exhibits a figure of merit larger than unity for temperatures up to 500 K. We believe that results reported here may be useful for designing practical applications of the cadmium chalcogenides monolayers. |
ArticleNumber | 164567 |
Author | Rivas-Silva, J.F. Hoat, D.M. Cocoletzi, Gregorio H. Naseri, Mosayeb |
Author_xml | – sequence: 1 givenname: Mosayeb surname: Naseri fullname: Naseri, Mosayeb email: m.naseri@iauksh.ac.ir organization: Department of Physics, Kermanshah Branch, Islamic Azad University, P.O. Box 6718997551, Kermanshah, Iran – sequence: 2 givenname: D.M. surname: Hoat fullname: Hoat, D.M. email: dominhhoat@tdtu.edu.vn organization: Computational Laboratory for Advanced Materials and Structures, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Viet Nam – sequence: 3 givenname: J.F. surname: Rivas-Silva fullname: Rivas-Silva, J.F. organization: Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla 72570, Mexico – sequence: 4 givenname: Gregorio H. surname: Cocoletzi fullname: Cocoletzi, Gregorio H. email: cocoletz@ifuap.buap.mx organization: Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla 72570, Mexico |
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Keywords | First principles calculations Cadmium chalcogenides monolayers Electronic structure Optical properties Thermoelectric properties |
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SubjectTerms | Cadmium chalcogenides monolayers Electronic structure First principles calculations Optical properties Thermoelectric properties |
Title | Electronic structure, optical and thermoelectric properties of cadmium chalcogenides monolayers |
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