Electrical synaptic devices with a high recognition rate based on eco-friendly nanocomposites of a poly(methyl methacrylate) matrix embedded with graphene quantum dots for neuromorphic computing

Artificial synapse devices are currently the subjects of great attention as next-generation hardware for data processing to overcome the problem of data explosion due to the rapid advances in artificial intelligence and cloud computing technology. Nanocomposite-based devices enable unique applicatio...

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Published inOrganic electronics Vol. 126; p. 106997
Main Authors Ryu, Seong Yeon, Kim, Hyung Soon, An, Jun Seop, Kim, Youngjin, An, Haoqun, Kim, Jong-Ryeol, Yoon, Kijung, Kim, Tae Whan
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.2024
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ISSN1566-1199
1878-5530
DOI10.1016/j.orgel.2024.106997

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Abstract Artificial synapse devices are currently the subjects of great attention as next-generation hardware for data processing to overcome the problem of data explosion due to the rapid advances in artificial intelligence and cloud computing technology. Nanocomposite-based devices enable unique applications and have several advantages that cannot be achieved in single material-based devices. This study presents binary electrical synapses with digital data storing and analog data processing through a nanocomposite-based active layer composed of poly(methyl methacrylate) (PMMA) with embedded chlorine-functionalized graphene quantum dots (fGQDs) on an indium tin oxide (ITO) substrate. The Al/PMMA-fGQD/ITO devices with an fGQD concentrations of 5 wt% exhibited excellent memory performance with RON/ROFF ratio of 103. Moreover, we demonstrated that our device can successfully emulate biological synaptic functions such as potentiation/depression, short-term/long-term memory, paired-pulse facilitation, learning experience, and spike-timing-dependent plasticity. Furthermore, on the basis of the synaptic behaviors of the devices, they achieved about a 90 % recognition capability when a learning algorithm was used in a single-layer neural network. [Display omitted] •A chlorine-functionalized graphene quantum dots (fGQDs) was introduced as tapping centers of an active layer in an artificial synapse.•The Al/PMMA-fGQDs/ITO device showed excellent electrical characteristics and successfully mimicked various synaptic functions.•Based on the conductance of the Al/PMMA-fGQDs/ITO device, the MNIST pattern recognition algorithm achieved about a 90 % recognition rate.
AbstractList Artificial synapse devices are currently the subjects of great attention as next-generation hardware for data processing to overcome the problem of data explosion due to the rapid advances in artificial intelligence and cloud computing technology. Nanocomposite-based devices enable unique applications and have several advantages that cannot be achieved in single material-based devices. This study presents binary electrical synapses with digital data storing and analog data processing through a nanocomposite-based active layer composed of poly(methyl methacrylate) (PMMA) with embedded chlorine-functionalized graphene quantum dots (fGQDs) on an indium tin oxide (ITO) substrate. The Al/PMMA-fGQD/ITO devices with an fGQD concentrations of 5 wt% exhibited excellent memory performance with RON/ROFF ratio of 103. Moreover, we demonstrated that our device can successfully emulate biological synaptic functions such as potentiation/depression, short-term/long-term memory, paired-pulse facilitation, learning experience, and spike-timing-dependent plasticity. Furthermore, on the basis of the synaptic behaviors of the devices, they achieved about a 90 % recognition capability when a learning algorithm was used in a single-layer neural network. [Display omitted] •A chlorine-functionalized graphene quantum dots (fGQDs) was introduced as tapping centers of an active layer in an artificial synapse.•The Al/PMMA-fGQDs/ITO device showed excellent electrical characteristics and successfully mimicked various synaptic functions.•Based on the conductance of the Al/PMMA-fGQDs/ITO device, the MNIST pattern recognition algorithm achieved about a 90 % recognition rate.
ArticleNumber 106997
Author Yoon, Kijung
Kim, Youngjin
An, Haoqun
Kim, Jong-Ryeol
Kim, Tae Whan
Ryu, Seong Yeon
Kim, Hyung Soon
An, Jun Seop
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Keywords Resistive random access memory
Artificial synaptic device
Graphene quantum dots
Neuromorphic computing
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Snippet Artificial synapse devices are currently the subjects of great attention as next-generation hardware for data processing to overcome the problem of data...
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StartPage 106997
SubjectTerms Artificial synaptic device
Graphene quantum dots
Neuromorphic computing
Resistive random access memory
Title Electrical synaptic devices with a high recognition rate based on eco-friendly nanocomposites of a poly(methyl methacrylate) matrix embedded with graphene quantum dots for neuromorphic computing
URI https://dx.doi.org/10.1016/j.orgel.2024.106997
Volume 126
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